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IRF2903ZPBF

TO-220AB MOSFET transistor in N-channel with 30V and 260A - Rail/Tube

数量 単価(USD) 合計金額
1 $1.563 $1.56
10 $1.529 $15.29
30 $1.507 $45.21
100 $1.486 $148.60

在庫：6,746

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
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迅速な見積もり

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概要 IRF2903ZPBF

When it comes to power MOSFET transistors for high-power applications, the IRF2903ZPBF stands out as a top choice. Manufactured by International Rectifier, this N-channel MOSFET boasts a 55V drain-source voltage rating and a continuous drain current rating of 115A, making it exceptionally well-suited for demanding power management tasks. Its ultra-low on-state resistance of 8.4mΩ sets it apart, making it ideal for high-power switching applications where minimizing conduction losses is critical. Additionally, its gate-source voltage rating of ±20V and high avalanche energy rating of 390mJ ensure compatibility with standard drive circuits and robust protection against overvoltage transients. The TO-220 package housing allows for easy mounting and efficient heat sinking in high-power environments while its RoHS compliance ensures it meets current environmental regulations, making it a sustainable and reliable choice for modern power management needs

主な特長

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid IRF2903ZPBF Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 820 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 260 A Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0024 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 290 W
Pulsed Drain Current-Max (IDM) 1020 A Qualification Status Not Qualified
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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    部品の品質保証: 365 日

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