IRF5305SPBF
Channel MOSFET with 55V voltage capacity and 31A current rating in D2PAK package
在庫：7,713
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IRF5305SPBF
-
パッケージ/ケース : TO252-3
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IRF5305SPBF データシート (PDF)
概要 IRF5305SPBF
Boasting a Vds rating of -55V and a continuous drain current rating of -31A, this transistor is a reliable choice for efficient power switching. Its low on-resistance of 0.027 ohms ensures minimal power dissipation, saving you energy and costs in the long run
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - Continuous Drain Current | 31 A | Rds On - Drain-Source Resistance | 60 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 42 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 110 W | Channel Mode | Enhancement |
| Brand | Infineon Technologies | Configuration | Single |
| Fall Time | 63 ns | Height | 2.3 mm |
| Length | 6.5 mm | Product Type | MOSFET |
| Rise Time | 66 ns | Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 39 ns |
| Typical Turn-On Delay Time | 14 ns | Width | 6.22 mm |
| Part # Aliases | SP001563340 | Unit Weight | 0.011640 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IRLHS6376TRPBF
Transistor MOSFET with N-channel, 30V Voltage Rating, 3.6A Current Rating, 6-Pin PQFN EP Package
IRFR3410TRPBF
Single N-channel MOSFET rated for 100V
IRL3705NPBF
Power MOSFET in TO-220AB Package
IRLMS2002TRPBF
Silicon N-channel MOSFET designed for switching applications with a maximum voltage of 20V and current of 6
IRLMS6802TRPBF
Infineon MOSFET IRLMS6802TRPBF
IRLTS6342TRPBF
30V N-Channel MOSFET 8.3A TSOP Package
IRFM450
Hermetically sealed power MOSFET
IRF7240PBF
IRF7240PBF MOSFET Transistor: P-Type, Small Outline Package
AUIRF2804S-7P
Low resistance 40V MOSFET ideal for automotive systems
AUIRF3710ZS
N-Channel Silicon FET: AUIRF3710ZS employs N-channel silicon technology
IRLHS2242TRPBF
Negative 30 volts, negative 8.5 amps
NGTB25N120FLWG
Trans IGBT Chip with a N-Channel, 1200V and 50A rating
ST2310DHI
ST2310DHI is a pre-biased NPN high-voltage fast-switching bipolar transistor
MUBW35-12E7
1200V 35 Amps Discrete Semiconductor Modules
IRF7316PBF
High voltage P-Channel MOSFET with dual design and 20V max VGS
IXFK34N80
N-channel MOSFET Discrete with 34A current handling capability and 800V voltage rating, TO264 package
NTE2920
Product NTE2920 is a ROHS-compliant TO-3P MOSFET with a null voltage of 4V at 250uA, suitable for high-power applications
MRF6V2150NB
NXP Semiconductors Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V
IRFU5305PBF
channel Silicon MOSFET with a voltage rating of 55V and a current rating of 31A, in a 3-pin configuration
VP0300L
30V MOSFET capable of handling 0.32A current and dissipating up to 0.8W of power