IRF7820PBF
With a gate charge of 29 nC, this MOSFET is suitable for various power applications
在庫:6,054
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- 365日の品質保証
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部品番号 : IRF7820PBF
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パッケージ/ケース : SOIC-8
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ブランド : Infineon
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IRF7820PBF データシート (PDF)
概要 IRF7820PBF
N-Channel 200 V 3.7A (Ta) 2.5W (Ta) Surface Mount 8-SO
主な特長
- High-speed switching
- Fully RoHS compliant
- No lead (Pb), no halogen
応用
- High power efficiency
- Compact size
- Excellent thermal performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 200 V |
Id - Continuous Drain Current | 3.7 A | Rds On - Drain-Source Resistance | 78 mOhms |
Vgs th - Gate-Source Threshold Voltage | 5 V | Qg - Gate Charge | 28 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.5 W | Brand | Infineon Technologies |
Configuration | Single | Fall Time | 12 ns |
Forward Transconductance - Min | 5 S | Height | 1.75 mm |
Length | 4.9 mm | Product Type | MOSFET |
Rise Time | 3.2 ns | Factory Pack Quantity | 95 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 14 ns | Typical Turn-On Delay Time | 7.1 ns |
Width | 3.9 mm | Part # Aliases | SP001570478 |
Unit Weight | 0.019048 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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