• IRFB7534PBF TO-220AB
IRFB7534PBF TO-220AB

IRFB7534PBF

Detailed Specs: 100A continuous current capability, with a power dissipation of 294W at 3.7V and 250uA

数量 単価(USD) 合計金額
1 $1.406 $1.41
10 $1.227 $12.27
50 $0.881 $44.05
100 $0.771 $77.10
500 $0.721 $360.50
1000 $0.697 $697.00

在庫：7,840

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
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迅速な見積もり

見積もりリクエストを送信してください IRFB7534PBF このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IRFB7534PBF

With a maximum continuous drain current of 195A and a drain-source voltage of 60V, the IRFB7534PBF N-channel MOSFET is designed to handle high power applications with ease. The on-resistance of 0.002ohm at a test voltage of 10V ensures minimal power loss and high efficiency, making it ideal for use in power management and switching applications. Additionally, the threshold voltage of 3.7V provides precise control over the MOSFET's switching behavior, allowing for reliable and consistent performance

IRFB7534PBF

主な特長

  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid IRFB7534PBF Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 775 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (Abs) (ID) 195 A
Drain Current-Max (ID) 195 A Drain-source On Resistance-Max 0.0024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 294 W
Pulsed Drain Current-Max (IDM) 944 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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