IRFD1Z3
400mA, 60V N-channel MOSFET designed for small signal amplification purposes
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.532 | $0.53 |
200 | $0.206 | $41.20 |
500 | $0.199 | $99.50 |
1000 | $0.195 | $195.00 |
在庫:6,218
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IRFD1Z3
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パッケージ/ケース : 4-DIP
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Brand : Harris Corporation
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Components Classification : Single FETs, MOSFETs
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日付シート : IRFD1Z3 データシート (PDF)
概要 IRFD1Z3
The IRFD1Z3 MOSFET transistor offers exceptional performance in low-power applications, boasting a maximum drain-source voltage of 100V and a continuous drain current of 1A. Encased in a D-PAK surface mount package, it facilitates effortless installation on printed circuit boards
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Bulk | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 3.2Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
Power Dissipation (Max) | 1W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Supplier Device Package | 4-DIP, Hexdip |
Package / Case | 4-DIP (0.300", 7.62mm) |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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