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IRFS7537TRLPBF

D2PAK MOSFET with 60V N-channel and 173A current capability

数量 単価(USD) 合計金額
1 $1.186 $1.19
10 $1.033 $10.33
30 $0.950 $28.50
100 $0.853 $85.30
500 $0.588 $294.00
800 $0.570 $456.00

在庫：9,976

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください IRFS7537TRLPBF このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IRFS7537TRLPBF

The IRFS7537TRLPBF is a powerful N-channel MOSFET with a drain-source voltage rating of 60V and a continuous drain current of 173A. This makes it suitable for high-power applications in automotive and industrial settings. With an on-resistance of 0.00275ohm and a power dissipation of 230W, this MOSFET offers low conduction losses and efficient power handling. The TO-263AB package and 3-pin configuration make it easy to integrate into circuit designs, and its maximum operating temperature of 175°C ensures reliable performance even in demanding conditions. Part of the HEXFET Series, this MOSFET has been designed for high reliability and performance. It conforms to automotive qualification standards and has an MSL rating of 1, making it suitable for a wide range of applications. In addition, it is free from SVHC (Substances of Very High Concern), making it compliant with the latest environmental regulations

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TO-263AB-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 173 A
Rds On - Drain-Source Resistance 3.3 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.7 V Qg - Gate Charge 142 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 230 W Channel Mode Enhancement
Tradename StrongIRFET Brand Infineon Technologies
Configuration Single Fall Time 84 ns
Forward Transconductance - Min 190 S Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Rise Time 105 ns Factory Pack Quantity 800
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 82 ns Typical Turn-On Delay Time 15 ns
Width 6.22 mm Unit Weight 0.011640 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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