IRG4BC10K
channel insulated gate bipolar transistor (IGBT) chip with a voltage rating of 600V and a current rating of 9A
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部品番号 : IRG4BC10K
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パッケージ/ケース : TO-220-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IRG4BC10K データシート (PDF)
概要 IRG4BC10K
Encased in a TO-220AB package, the IRG4BC10K prioritizes both thermal efficiency and user convenience. Its insulation for high voltage applications renders it versatile for a wide array of industrial and automotive uses, making it a must-have component for those seeking reliability and innovation in their power management solutions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 9 A |
| Current - Collector Pulsed (Icm) | 18 A | Vce(on) (Max) @ Vge, Ic | 2.62V @ 15V, 5A |
| Power - Max | 38 W | Switching Energy | 160µJ (on), 100µJ (off) |
| Input Type | Standard | Gate Charge | 19 nC |
| Td (on/off) @ 25°C | 11ns/51ns | Test Condition | 480V, 5A, 100Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-220-3 | Supplier Device Package | TO-220AB |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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