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IRG4BC20W

IRG4BC20W: A transistor IGBT chip

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見積もりリクエストを送信してください IRG4BC20W このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IRG4BC20W

Noteworthy protection features make the IRG4BC20W stand out among its competitors. With a peak pulse current of 160A and peak power dissipation of 500W for short durations, this IGBT can handle overloads and surges with ease, providing robust protection in critical situations. Its fast switching speed of 60ns and low on-state voltage of 1.6V contribute to efficient power conversion and reduced power losses, making it a top choice for high-power applications. The low gate charge of 63nC allows for precise control over the switching behavior, giving users the flexibility to tailor its performance to their specific needs. In conclusion, the IRG4BC20W is a reliable and versatile IGBT that offers unparalleled performance and efficiency in high-power applications

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Package Tube Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 13 A
Current - Collector Pulsed (Icm) 52 A Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Power - Max 60 W Switching Energy 60µJ (on), 80µJ (off)
Input Type Standard Gate Charge 26 nC
Td (on/off) @ 25°C 22ns/110ns Test Condition 480V, 6.5A, 50Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Package / Case TO-220-3 Supplier Device Package TO-220AB

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