IRG4BC30KD-SPBF
Trans IGBT Chip N-CH 600V 28A 100W 3-Pin(2+Tab) D2PAK Tube
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $2.651 | $2.65 |
200 | $1.027 | $205.40 |
500 | $0.991 | $495.50 |
1000 | $0.972 | $972.00 |
在庫:9,192
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IRG4BC30KD-SPBF
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パッケージ/ケース : DPAK-3
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Brand : INFINEON
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Components Classification : Single IGBTs
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日付シート : IRG4BC30KD-SPBF データシート (PDF)
概要 IRG4BC30KD-SPBF
The IRG4BC30KD-SPBF IGBT is a high-performance transistor designed for use in a variety of power electronic applications. With a collector-to-emitter breakdown voltage of 600V and a continuous collector current rating of 28A, this IGBT is suitable for demanding high-power switching tasks. The D2-PAK case style and SMD termination type make it easy to integrate into modern surface-mount designs, while the low Vce saturation voltage of 2.21V ensures efficient operation in high-power applications. The IRG4BC30KD-SPBF is capable of handling pulsed currents of up to 58A, making it ideal for applications that require short bursts of high power. With a power dissipation rating of 100W and a maximum fall time of 160ns, this IGBT offers excellent performance in a compact and reliable package
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | DPAK-3 |
Mounting Style | SMD/SMT | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.7 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 28 A |
Pd - Power Dissipation | 100 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Brand | Infineon Technologies |
Continuous Collector Current Ic Max | 28 A | Gate-Emitter Leakage Current | 100 nA |
Height | 4.83 mm | Length | 10.67 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 50 |
Subcategory | IGBTs | Width | 9.65 mm |
Unit Weight | 0.009185 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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