IRLR3410PBF
With a voltage handling capacity of 12V to 300V, the IRLR3410PBF is a reliable choice for power management in various electronic devices
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.320 | $0.32 |
200 | $0.124 | $24.80 |
500 | $0.119 | $59.50 |
1000 | $0.117 | $117.00 |
在庫:5,316
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IRLR3410PBF
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パッケージ/ケース : TO252-3
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ブランド : Infineon Technologies
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IRLR3410PBF データシート (PDF)
概要 IRLR3410PBF
Engineers and designers appreciate the IRLR3410PBF for its superior thermal performance and rugged construction. The 1-element design simplifies circuit complexity, making it easier to implement and troubleshoot. Whether used in motor control, power supplies, or battery management systems, this FET delivers excellent switching characteristics and low conduction losses, optimizing overall system efficiency
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 15 A | Rds On - Drain-Source Resistance | 155 mOhms |
Vgs - Gate-Source Voltage | - 16 V, + 16 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 22.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 52 W |
Channel Mode | Enhancement | Brand | Infineon Technologies |
Configuration | Single | Fall Time | 26 ns |
Forward Transconductance - Min | 7.7 S | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 53 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 30 ns |
Typical Turn-On Delay Time | 7.2 ns | Width | 6.22 mm |
Part # Aliases | SP001552798 | Unit Weight | 0.011640 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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