JANS2N2222AUB
Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UB Waffle
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $49.413 | $49.41 |
200 | $19.123 | $3,824.60 |
500 | $18.451 | $9,225.50 |
1000 | $18.119 | $18,119.00 |
在庫:9,287
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : JANS2N2222AUB
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パッケージ/ケース : 4-SMD
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Brand : Microchip Technology
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Components Classification : Single Bipolar Transistors
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日付シート : JANS2N2222AUB データシート (PDF)
概要 JANS2N2222AUB
The JANS2N2222AUB is a top-of-the-line NPN bipolar junction transistor (BJT) specifically engineered for the demands of military and aerospace applications. With a maximum collector current (Ic) of 800mA and maximum power dissipation (Pd) of 500mW, this high-reliability transistor is well-suited for a variety of low-power switching and amplification tasks. Its DC current gain (hFE) of 100 minimum at 150mA provides assurance of stable and consistent performance in diverse circuit setups. Housed in a hermetically sealed TO-18 metal can package, the JANS2N2222AUB ensures enhanced durability in harsh environmental conditions, while its guaranteed operation over a wide temperature range from -65°C to 200°C makes it the perfect choice for extreme environments
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | Military, MIL-PRF-19500/255 | Package | Bulk |
Product Status | Active | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 800 mA | Voltage - Collector Emitter Breakdown (Max) | 50 V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | Current - Collector Cutoff (Max) | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | Power - Max | 500 mW |
Operating Temperature | -65°C ~ 200°C (TJ) | Mounting Type | Surface Mount |
Package / Case | 4-SMD, No Lead | Supplier Device Package | UB |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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