KST5551
Transistors - Bipolar BJT
在庫:5,934
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部品番号 : KST5551
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パッケージ/ケース : SOT-23
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Brand : onsemi
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Components Classification : Single Bipolar Transistors
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日付シート : KST5551 データシート (PDF)
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Series : KST5551
概要 KST5551
主な特長
- Power Gain: 15dB
- Current Gain: 50V/A
- Voltage Gain: 30
- Input Impedance: 1kΩ
- Output Impedance: 2.5kΩ
応用
- Industrial automation
- EMI protection
- Display interfaces
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
Package / Case | SOT-23 | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 160 V |
Collector- Base Voltage VCBO | 180 V | Emitter- Base Voltage VEBO | 6 V |
Maximum DC Collector Current | 600 mA | Pd - Power Dissipation | 350 mW |
Gain Bandwidth Product fT | 300 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | KST5551 |
Brand | onsemi / Fairchild | Continuous Collector Current | 600 mA |
DC Collector/Base Gain hfe Min | 80 | DC Current Gain hFE Max | 250 |
Height | 0.93 mm | Length | 2.9 mm |
Product Type | BJTs - Bipolar Transistors | Subcategory | Transistors |
Technology | Si | Width | 1.3 mm |
Unit Weight | 0.007090 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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