MRF151G
Very High Frequency Band RF Power Field-Effect Transistor, Silicon N-Channel Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $419.054 | $419.05 |
200 | $162.168 | $32,433.60 |
500 | $156.469 | $78,234.50 |
1000 | $153.654 | $153,654.00 |
在庫:4,423
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : MRF151G
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パッケージ/ケース : 375-04
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ブランド : MACOM Technology Solutions
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コンポーネントの分類 : RF FETs, MOSFETs
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日付シート : MRF151G データシート (PDF)
概要 MRF151G
The MRF151G is a powerhouse in the world of RF power transistors, boasting ruggedness and reliability for demanding applications. With a maximum operating frequency of 520 MHz and a power output of up to 150 watts, this N-Channel FET is a top choice for high-power, high-gain requirements in the HF, VHF, and UHF frequency bands. Its high gain of 12.5 dB at 520 MHz ensures superior performance in applications such as broadcast transmitters, military radios, and industrial settings where linear gain is crucial. Housed in a TO-220 package with a 4-pin flange, the MRF151G is designed for efficient heat dissipation to maintain optimal performance
主な特長
- Excellent thermal stability and reliability
- Multifunctional design with diverse applications
- Precise temperature control for optimal performance
- High gain and excellent noise immunity
- Fast response time for dynamic applications
- Precise frequency control for high accuracy
応用
- Powerful RF amplifiers
- Advanced radar tech
- Industrial RF systems
- RF heating solutions
- Wireless infrastructure
- Medical RF equipment
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | RF MOSFET Transistors | RoHS | Details |
Transistor Polarity | N-Channel | Technology | Si |
Id - Continuous Drain Current | 40 A | Vds - Drain-Source Breakdown Voltage | 125 V |
Operating Frequency | 175 MHz | Gain | 14 dB |
Output Power | 300 W | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Mounting Style | SMD/SMT |
Brand | MACOM | Configuration | Dual |
Pd - Power Dissipation | 500 W | Product Type | RF MOSFET Transistors |
Factory Pack Quantity | 10 | Subcategory | MOSFETs |
Type | RF Power MOSFET | Vgs - Gate-Source Voltage | 40 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Unit Weight | 0.373904 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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