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MT29F256G08CJAABWP-12:A

Multi-level cell NAND flash memory chip with a capacity of 256 gigabits, operating at 3.3 volts with parallel and serial interfaces

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概要 MT29F256G08CJAABWP-12:A

The MT29F256G08CJAABWP-12:A chip offers a synchronous interface with data transfer rates peaking at 133 megabits per second, ensuring seamless data exchange. Furthermore, it incorporates sophisticated wear-leveling and error correction technologies to maintain data integrity and reliability, crucial for any storage device. Its high endurance and low power consumption characteristics make it a versatile choice for various applications across industries like consumer electronics, automotive, and industrial sectors

主な特長

  • Open NAND Flash Interface (ONFI) 2.2-compliant1
  • Multiple-level cell (MLC) technology
  • Organization
  • – Page size x8: 8640 bytes (8192 + 448 bytes)
  • – Block size: 256 pages (2048K + 112K bytes)
  • – Plane size: 2 planes x 2048 blocks per plane
  • – Device size: 64Gb: 4096 blocks;
  • 128Gb: 8192 blocks;
  • 256Gb: 16,384 blocks;
  • 512Gb: 32,786 blocks
  • Synchronous I/O performance
  • – Up to synchronous timing mode 5
  • – Clock rate: 10ns (DDR)
  • – Read/write throughput per pin: 200 MT/s
  • Asynchronous I/O performance
  • – Up to asynchronous timing mode 5
  • tRC/tWC: 20ns (MIN)
  • Array performance
  • – Read page: 50µs (MAX)
  • – Program page: 1300µs (TYP)
  • – Erase block: 3ms (TYP)
  • Operating Voltage Range
  • – VCC: 2.7–3.6V
  • – VCCQ: 1.7–1.95V, 2.7–3.6V
  • Command set: ONFI NAND Flash Protocol
  • Advanced Command Set
  • – Program cache
  • – Read cache sequential
  • – Read cache random
  • – One-time programmable (OTP) mode
  • – Multi-plane commands
  • – Multi-LUN operations
  • – Read unique ID
  • – Copyback
  • First block (block address 00h) is valid when shipped
  • from factory. For minimum required ECC, see
  • Error Management (page 109).
  • RESET (FFh) required as first command after power
  • Operation status byte provides software method for
  • detecting
  • – Operation completion
  • – Pass/fail condition
  • – Write-protect status
  • Data strobe (DQS) signals provide a hardware method
  • for synchronizing data DQ in the synchronous
  • interface
  • Copyback operations supported within the plane
  • from which data is read
  • Quality and reliability
  • – Data retention: 10 years
  • – Endurance: 5000 PROGRAM/ERASE cycles
  • Operating temperature:
  • – Commercial: 0°C to +70°C
  • – Industrial (IT): –40ºC to +85ºC
  • Package
  • – 52-pad LGA
  • – 48-pin TSOP
  • – 100-ball BGA

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category NAND Flash Series MT29F
Brand Micron Memory Type NAND
Product NAND Flash Product Type NAND Flash
Subcategory Memory & Data Storage

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金:90日以内

    返品・交換:90日以内

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