MT41J128M16JT-125:K TR
96-Pin FBGA Packaged Dynamic Random Access Memory
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $3.321 | $3.32 |
| 10 | $2.851 | $28.51 |
| 30 | $2.571 | $77.13 |
| 100 | $2.042 | $204.20 |
| 500 | $1.912 | $956.00 |
| 1000 | $1.852 | $1,852.00 |
在庫：9,344
概要 MT41J128M16JT-125:K TR
Micron's MT41J128M16JT-125:K TR is a registered DIMM with error correction code (ECC) support, ensuring data integrity and reliability. The 78-ball FBGA package and on-die termination (ODT) contribute to its overall efficiency and performance. With a data transfer rate of 1.5 GT/s, this module is designed to meet the needs of modern computing and data-intensive applications
主な特長
- Module Size: 256 M x 16
- Type: DDR3 SDRAM
- Voltage Range: 1.2 V ± 5%
- Speed Grade: PC3-8500
- Operating Temperature: 0°C to 85°C
応用
- Next-gen networking.
- Industrial automation ready.
- Smart TV performance.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | DRAM | RoHS | Details |
| Type | SDRAM - DDR3 | Memory Size | 2 Gbit |
| Data Bus Width | 16 bit | Maximum Clock Frequency | 800 MHz |
| Package / Case | FBGA-96 | Organization | 128 M x 16 |
| Access Time | 20 ns | Supply Voltage - Min | 1.425 V |
| Supply Voltage - Max | 1.575 V | Minimum Operating Temperature | 0 C |
| Maximum Operating Temperature | + 95 C | Series | MT41J |
| Brand | Micron | Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT | Product Type | DRAM |
| Factory Pack Quantity | 2000 | Subcategory | Memory & Data Storage |
| Supply Current - Max | 49 mA | Unit Weight | 0.070560 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
MT41K512M16HA-125:A
Advanced DDR3 memory module featuring 8GB storage and 512Mx16 organization, housed in a FBGA package"
MT29F8G16ADBDAH4-IT:D
63VFBGA-packaged 8 gigabit parallel flash memory chip
MT41K256M16TW-107 XIT:P
(62 characters)
MT29F2G08ABAEAWP-IT:E
TSOP 48/C°/ 256MX8 NAND FLASH PLASTIC EXT TEMP PBF
MT46V32M16P-5B IT:J
128 Megabit DDR1 DRAM
MT41K256M16TW-107 AIT:P
8 X 14 MM Lead Free FBGA-96
MT47H128M16RT-25E:C
Operating temperature range: 0 to 85 degrees
MT40A1G16KD-062E:E
CMOS technology used in DDR4 DRAM with 1GX16 capacity and PBGA96 packaging
MT28EW01GABA1LJS-0SIT
High Capacity Data Storage Solution
MT47H128M8CF-25E IT:H
MT47H128M8CF-25E IT:H is a 1Gbit DDR2 SDRAM chip with a 128Mx8 configuration and operates at 1.8V
MT18KSF2G72HZ-1G6A2
1.35V DDR3L SODIMM MT18KSF2G72HZ-1G6A2
24AA64-I/SN
Low voltage operation at 1.8V
PC28F256M29EWHA
56 megabits capacity and 100 nanoseconds access speed in a 64-ball fine pitch ball grid array package
W25Q80EWZPIG
NOR Flash Memory with Serial Interface
TMP87PH47UG
8 MHz PQFP44 microcontroller
MX25V8006EM1I-13G
Features: Small Size of 3.9mm with Low Power Consumption of 12mA
AM29F040B-55JF
5ns PQCC32 512Kx8 Flash memory
MX25U4035FZUI
Low voltage 1.8V flash memory
MT41J256M16HA-093:E
1.5V low voltage operation
PC28F256M29EWLA
Low-profile Ball Grid Array (LBGA) package for compact integration