MT41K256M16HA-125:E
TFBGA-96 SDRAM MT41K256M16HA-125E RoHS
在庫:9,849
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : MT41K256M16HA-125:E
-
パッケージ/ケース : FBGA-96
-
Brand : Micron Technology
-
Components Classification : Memory
-
日付シート : MT41K256M16HA-125:E データシート (PDF)
概要 MT41K256M16HA-125:E
The MT41K256M16HA-125:E is a high-performance DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) module designed for use in a variety of computing and embedded applications. It offers high-speed data transfer rates and large capacity, making it ideal for use in servers, workstations, and high-performance computing systems.
Pinout
(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)
- VDD: Power Supply Voltage
- VSS: Ground
- DQ0-DQ63: Data Input/Output Lines
- DQS0-DQS7: Data Strobe Lines
- CLK: Clock Input
- CS: Chip Select
- CA0-CA9: Address Lines
Circuit Diagram
Incorporate a circuit diagram that illustrates the connections and operation of the MT41K256M16HA-125:E DDR3 SDRAM module for a more visual representation.
主な特長
- High-Speed Data Transfer: The MT41K256M16HA-125:E offers high-speed data transfer rates, allowing for fast and efficient data processing.
- Large Capacity: With a capacity of XXGB, the MT41K256M16HA-125:E provides ample space for storing and processing large amounts of data.
- Low Power Consumption: It features low power consumption, reducing energy costs and heat dissipation.
- Error Correction: The MT41K256M16HA-125:E supports error correction, ensuring data integrity and reliability.
Note: For detailed technical specifications, refer to the MT41K256M16HA-125:E datasheet.
応用
- Servers: The MT41K256M16HA-125:E is suitable for use in servers, providing high-speed memory for data processing and storage.
- Workstations: It can be used in workstations for high-performance computing applications, such as video editing and 3D rendering.
- Networking Equipment: The MT41K256M16HA-125:E is ideal for use in networking equipment, providing high-speed memory for data routing and processing.
- Industrial Computers: It can be used in industrial computers for controlling and monitoring manufacturing processes.
Functionality
The MT41K256M16HA-125:E DDR3 SDRAM module provides high-speed and reliable memory for a variety of computing and embedded applications, offering performance and efficiency in a compact form factor.
Usage Guide
- Installation: Insert the MT41K256M16HA-125:E module into the appropriate memory slot on the motherboard, ensuring proper alignment and seating.
- Configuration: Configure the system BIOS to recognize the MT41K256M16HA-125:E module and allocate memory resources accordingly.
- Operation: The MT41K256M16HA-125:E module will operate automatically once installed and configured, providing high-speed memory access for the system.
- Maintenance: No special maintenance is required for the MT41K256M16HA-125:E module. However, ensure that the system is free of dust and debris to maintain optimal performance.
Frequently Asked Questions
Q: What is the maximum data transfer rate of the MT41K256M16HA-125:E?
A: The MT41K256M16HA-125:E supports a maximum data transfer rate of 1600 Mbps, depending on the operating conditions and configuration.
Q: Is the MT41K256M16HA-125:E compatible with all DDR3 SDRAM systems?
A: Yes, the MT41K256M16HA-125:E is compatible with all DDR3 SDRAM systems, ensuring broad compatibility and ease of use.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | DRAM | Mounting Style | SMD/SMT |
Package / Case | FBGA-96 | Series | MT41K |
Brand | Micron | Product Type | DRAM |
Subcategory | Memory & Data Storage |
同等部品
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
MT41K256M16HA-125:E 同等部品
For the MT41K256M16HA-125:E コンポーネント, これらの交換部品や代替部品をご検討ください。
モデル | メーカー | パッケージ/ケース | 説明 |
---|---|---|---|
K4B2G1646F-BCK0 | Samsung Electronics | 96-ball FBGA | A DDR3 SDRAM IC from Samsung offering similar functionality and features to the MT41K256M16HA-125:E. |
MT41K256M16HA-107 | Micron | 96-ball FBGA | Another DDR3 SDRAM IC option from Micron that can be used as an alternative to the MT41K256M16HA-125:E. |
H5TC4G63AFR-PBA | SK Hynix | 96-ball FBGA | An alternative DDR3 SDRAM IC from SK Hynix with similar specifications to the MT41K256M16HA-125:E. |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![MT41K512M16HA-125:A](/files/uploads/product/s/f0e0d99216744b9ca6fd5058ba364ce3.webp)
MT41K512M16HA-125:A
Advanced DDR3 memory module featuring 8GB storage and 512Mx16 organization, housed in a FBGA package"
![MT29F8G16ADBDAH4-IT:D](/files/uploads/product/s/3201d21272d84903a7f8545d336a67d8.webp)
MT29F8G16ADBDAH4-IT:D
63VFBGA-packaged 8 gigabit parallel flash memory chip
![MT41K256M16TW-107 XIT:P](/files/uploads/product/s/42759ea37c0b46c79251f68369333f60.webp)
MT41K256M16TW-107 XIT:P
(62 characters)
![MT29F2G08ABAEAWP-IT:E](/files/uploads/product/s/537ed1aa90944c6ca0b0d0fe320cb609.webp)
MT29F2G08ABAEAWP-IT:E
TSOP 48/C°/ 256MX8 NAND FLASH PLASTIC EXT TEMP PBF
![MT46V32M16P-5B IT:J](/files/uploads/product/s/cbebb1ac34ac4ba6a4762d4563267d27.webp)
MT46V32M16P-5B IT:J
128 Megabit DDR1 DRAM
![MT41K256M16TW-107 AIT:P](/files/uploads/product/s/92d069720af94ee88d4d4ad6d5b0bfe8.webp)
MT41K256M16TW-107 AIT:P
8 X 14 MM Lead Free FBGA-96
![MT47H128M16RT-25E:C](/files/uploads/product/s/b7dea8091c6d4c26a1e73e6d0210d4fb.webp)
MT47H128M16RT-25E:C
Operating temperature range: 0 to 85 degrees
![MT40A1G16KD-062E:E](/files/uploads/product/s/33913cf3ce1e4cbdab047bb30590b920.webp)
MT40A1G16KD-062E:E
CMOS technology used in DDR4 DRAM with 1GX16 capacity and PBGA96 packaging
![MT28EW01GABA1LJS-0SIT](/files/uploads/product/s/0d5b941fa5444fd48e230891ac956828.webp)
MT28EW01GABA1LJS-0SIT
High Capacity Data Storage Solution
![MT47H128M8CF-25E IT:H](/files/uploads/product/s/912cae55f0a54acb881e56b5ead06e05.webp)
MT47H128M8CF-25E IT:H
MT47H128M8CF-25E IT:H is a 1Gbit DDR2 SDRAM chip with a 128Mx8 configuration and operates at 1.8V
![MTFC64GAJAECE-AIT](/img/package/fbga.jpg)
MTFC64GAJAECE-AIT
Cutting-edge memory technology
![CY7C185-25VC](/img/package/soj28.jpg)
CY7C185-25VC
Asynchronous operation
![MT29F2G01ABAGDSF-IT:G](/img/package/sop16.jpg)
MT29F2G01ABAGDSF-IT:G
Two Gigabit NAND Flash Storage
![2SJ680](/img/package/to3.jpg)
2SJ680
2SJ680 product details: P-ch MOSFET with 200V and 2.5A ratings
![M48Z512A-70PM1](/img/package/dip4.jpg)
M48Z512A-70PM1
Non-Volatile SRAM Module, 512KX8, 70ns, CMOS, PDIP32
![SD9DS28K-8G](/img/package/bga.jpg)
SD9DS28K-8G
Solid State Drives LPDDR3
![MT47H32M16HR-25E:G](/img/package/fbga.jpg)
MT47H32M16HR-25E:G
Advanced memory module with improved data transfer rates and increased capacity for enhanced system performance and reliabilit
![M29W320DB70N6](/img/package/tsop48.jpg)
M29W320DB70N6
4M x 8/2M x 16 Configuration - High Density Storage
![XC18V01VQ44C](/img/package/tqfp44.jpg)
XC18V01VQ44C
Memory Configuration Proms for FPGAs ROHS XC18V01VQ44C QFP-44
![CY7C1061AV33-10ZXC](/img/package/tsop54.jpg)
CY7C1061AV33-10ZXC
A high-density, 16Mb fast asynchronous SRAM module providing high-speed data retrieval with a 1Mx16 organization."