NTE4151PT1G
NTE4151PT1G P-Channel MOSFET, 760 mA, 20 V, 3-Pin SOT-523 ON Semiconductor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 10 | $0.048 | $0.48 |
| 100 | $0.039 | $3.90 |
| 300 | $0.034 | $10.20 |
| 3000 | $0.031 | $93.00 |
| 6000 | $0.028 | $168.00 |
| 9000 | $0.027 | $243.00 |
在庫：7,060
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NTE4151PT1G
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パッケージ/ケース : SC-89
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : NTE4151PT1G データシート (PDF)
概要 NTE4151PT1G
The NTE4151PT1G is a P-channel MOSFET designed for various applications that require high current handling and low voltage operation. With its ability to withstand a maximum drain-source voltage of -20V and continuous drain current of -760mA, this device is well-suited for power management systems in automotive and industrial settings
主な特長
- Wide Operating Temperature
- ESD Protected Pinouts
- Rapid Response Time
応用
- LED Lighting Systems
- Sensor Triggered Devices
- Portable Electronics
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Active | FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 760mA (Tj) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 350mA, 4.5V | Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 4.5 V | Vgs (Max) | ±6V |
| Input Capacitance (Ciss) (Max) @ Vds | 156 pF @ 5 V | Power Dissipation (Max) | 313mW (Tj) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | SC-89-3 | Package / Case | SC-89, SOT-490 |
| Base Product Number | NTE4151 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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