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NTGD1100LT1G

Trans MOSFET N/P-CH 8V 3.3A 6-Pin SC-74 T/R

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  • 90日間のアフター保証
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迅速な見積もり

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概要 NTGD1100LT1G

One of the key features of the NTGD1100LT1G is its low threshold voltage of 1V, which is essential for low power applications that demand optimal energy utilization. Additionally, its low on-resistance of 2.5 ohms enhances power management capabilities, allowing for effective control and distribution of power within electronic devices. Whether used in load switching, power management, or signal amplification, this FET exhibits exceptional functionality across various devices, including portable electronics, battery-powered systems, and consumer products

主な特長

  • This diode is designed to protect sensitive electronics from voltage transients and surges
  • Ideal for use in communication systems and high-speed data transmission
  • Fast response time and low leakage current ensure reliable protection against overvoltage
  • Maximum clamping voltage of 12V ensures reliable protection against surges
  • Low capacitance and fast response time make it suitable for use in high-speed data transfer lines

応用

  • Mobile Devices
  • Handheld Gadgets
  • On-the-Go Tech

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Obsolete Switch Type General Purpose
Ratio - Input:Output 1:1 Output Configuration High Side
Output Type P-Channel Interface On/Off
Voltage - Load 1.8V ~ 8V Current - Output (Max) 3.3A
Rds On (Typ) 40mOhm Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 6-TSOP
Package / Case TSOP-6 Base Product Number NTGD1100
Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 8 V
Id - Continuous Drain Current 3.3 A Rds On - Drain-Source Resistance 55 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 600 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 830 mW Channel Mode Enhancement
Series NTGD1100L Brand onsemi
Configuration Dual Height 0.94 mm
Length 3 mm Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Type MOSFET
Width 1.5 mm Unit Weight 0.000705 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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