NTMFS4C01NT1G
The NTMFS4C01NT1G power MOSFET is designed for applications requiring high current handling capabilities, with a continuous rating of 303A
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $2.685 | $2.68 |
| 10 | $2.336 | $23.36 |
| 30 | $2.117 | $63.51 |
| 100 | $1.893 | $189.30 |
| 500 | $1.791 | $895.50 |
| 1500 | $1.748 | $2,622.00 |
在庫：8,204
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NTMFS4C01NT1G
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パッケージ/ケース : SO8FL-4
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Brand : Onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : NTMFS4C01NT1G データシート (PDF)
概要 NTMFS4C01NT1G
Power MOSFET 30 V, 0.9 mΩ, 303 A, Single N−Channel, SO−8FL
主な特長
- Fault Tolerant for High Availability
- Low EMI for Reduced Interference
- High Surge Immunity for Reliable Operation
- Silicon Oxide Passivation for Long Term Reliability
- Wide Frequency Range for Versatility
- Compact Footprint for Space Efficiency
応用
- Perfect for all your needs
- Versatile and reliable
- Great for various tasks
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Last Shipments | Compliance | PbAHP |
| Package Type | SO-8FL / DFN-5 | Case Outline | 488AA |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 1500 |
| ON Target | N | Channel Polarity | N-Channel |
| Configuration | Single | V(BR)DSS Min (V) | 30 |
| VGS Max (V) | 20 | VGS(th) Max (V) | 2.2 |
| ID Max (A) | 303 | PD Max (W) | 134 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 1.2 | RDS(on) Max @ VGS = 10 V (mΩ) | 0.9 |
| Qg Typ @ VGS = 10 V (nC) | 65 | Ciss Typ (pF) | 10144 |
| Pricing ($/Unit) | Price N/A |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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