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NTTFS004N04CTAG

High-power N-channel MOSFET for advanced power management

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概要 NTTFS004N04CTAG

Experience the power of the NTTFS004N04CTAG Industrial Power MOSFET. Designed for compact and efficient applications, this MOSFET features a 3x3mm flat lead package that ensures easy integration into your designs. Its high thermal performance allows for reliable operation in varied conditions, while the Wettable Flank Option enhances optical inspection for improved quality control. AEC-Q101 Qualified and PPAP capable, this MOSFET is the ideal choice for automotive applications where performance and reliability are paramount

主な特長

  • Wide Temperature Range
  • Low Power Operating Modes
  • Fully Integrated Memory
  • Ruggedized Mechanical Design
  • High-Speed Data Transfer
  • Silicon-On-Insulator Technology

応用

  • Brushless Motor
  • Audio Amplifiers
  • Robot Controllers

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 77A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 35A, 10V Vgs(th) (Max) @ Id 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V Power Dissipation (Max) 3.2W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) Package / Case WDFN-8
Base Product Number NTTFS004 Manufacturer onsemi
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 77 A
Rds On - Drain-Source Resistance 4.9 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V Qg - Gate Charge 18 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 55 W Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 8 ns Forward Transconductance - Min 57 S
Product Type MOSFET Rise Time 80 ns
Factory Pack Quantity 1500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 26 ns
Typical Turn-On Delay Time 12 ns

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    部品の品質保証: 365 日

    返品・返金：90日以内

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