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NTTFS6H854NLTAG

Power, Single N-Channel MOSFET

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概要 NTTFS6H854NLTAG

Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.

主な特長

  • Low On-Resistance
  • Low Gate Charge
  • Small Footprint (3x3 mm)
  • RoHS Compliant
  • Capable of 5V (Logic Level) Drive

応用

  • Reverser Battery protection
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • Synchronous Rectification

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 902 pF @ 40 V Power Dissipation (Max) 3.2W (Ta), 54W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) Package / Case WDFN-8
Base Product Number NTTFS6 Manufacturer onsemi
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V Id - Continuous Drain Current 41 A
Rds On - Drain-Source Resistance 13.4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 17 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 54 W Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 6 ns Forward Transconductance - Min 56 S
Product Type MOSFET Rise Time 36 ns
Factory Pack Quantity 1500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 10 ns

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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