PBSS4250X,115
NXP PBSS4250X,115 NPN Low Saturation Bipolar Transistor, 2 A, 50 V, 4-Pin UPAK
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.158 | $0.16 |
10 | $0.118 | $1.18 |
30 | $0.101 | $3.03 |
100 | $0.079 | $7.90 |
500 | $0.070 | $35.00 |
1000 | $0.050 | $50.00 |
在庫:5,197
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : PBSS4250X,115
-
パッケージ/ケース : SOT-89-3
-
Brand : Nexperia
-
Components Classification : Single Bipolar Transistors
-
日付シート : PBSS4250X,115 データシート (PDF)
-
Series : PBSS4250X
概要 PBSS4250X,115
NPN low V transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5250X
主な特長
- Superior current handling capability IC and ICM
- Low VCEsat for reduced losses
- Space-saving design for PCBs
応用
- Efficient power management
- Flexible DC/DC converters
- Reliable battery charger
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Nexperia | Product Category | Bipolar Transistors - BJT |
RoHS | Details | Mounting Style | SMD/SMT |
Package / Case | SOT-89-3 | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 50 V |
Collector- Base Voltage VCBO | 50 V | Emitter- Base Voltage VEBO | 5 V |
Collector-Emitter Saturation Voltage | 380 mV | Maximum DC Collector Current | 2 A |
Pd - Power Dissipation | 550 mW | Gain Bandwidth Product fT | 100 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Brand | Nexperia | DC Collector/Base Gain hfe Min | 300 at 100 mA, 2 V, 300 at 500 mA, 2 V, 300 at 1 A, 2 V, 150 at 2 A, 2 V |
DC Current Gain hFE Max | 300 at 100 mA, 2 V | Height | 1.6 mm |
Length | 4.6 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 | Subcategory | Transistors |
Technology | Si | Width | 2.6 mm |
Part # Aliases | 934057967115 | Unit Weight | 0.035274 oz |
Product Status | Active | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 2 A | Voltage - Collector Emitter Breakdown (Max) | 50 V |
Vce Saturation (Max) @ Ib, Ic | 320mV @ 200mA, 2A | Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A, 2V | Power - Max | 1 W |
Frequency - Transition | 100MHz | Operating Temperature | 150°C (TJ) |
Grade | Automotive | Qualification | AEC-Q100 |
Mounting Type | Surface Mount | Supplier Device Package | SOT-89 |
Base Product Number | PBSS4250 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IRF3415PBF](/files/uploads/product/s/df01d09389414b4081c8e4ba011d8151.webp)
IRF3415PBF
43 amp current rating
![IRF7324TRPBF](/files/uploads/product/s/3948d550d5374f809816a190178cf104.webp)
IRF7324TRPBF
Silicon P-Type MOSFET with a Maximum Voltage of 20V and Current Handling Capability of 9A
![IRF7832TRPBF](/files/uploads/product/s/029a1d39ad0c4f3ab9b4942ca62e4608.webp)
IRF7832TRPBF
8-pin surface-mount N-channel MOSFET with a 30-volt, 20-amp rating
![IRF7831TRPBF](/files/uploads/product/s/af068289df9d4ab8a78292e9665a49d3.webp)
IRF7831TRPBF
30V N Channel MOSFET with 21A current rating and 3.6mΩ resistance at 10V
![IRFB3307ZPBF](/files/uploads/product/s/1c8faf20d8f64745a0d7510bb317b92e.webp)
IRFB3307ZPBF
Tube Packaging for IRFB3307ZPBF N-Channel Silicon MOSFET with 3 Pins and a Tab
![IRFB4310ZPBF](/files/uploads/product/s/f6d9073026134f81aef1218a83524f8a.webp)
IRFB4310ZPBF
100 V HEXFET Infineon IRFB4310ZPBF N-channel MOSFET, 127 A, 3-Pin TO-220AB
![IRFHM8326TRPBF](/files/uploads/product/s/f61ad18396734fb28aa79d040f92d371.webp)
IRFHM8326TRPBF
Single N-Channel 30 V 4.7 mOhm 39 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
![IRFP054NPBF](/files/uploads/product/s/6be61891ab6246ef82ff15cd960f8ab0.webp)
IRFP054NPBF
MOSFET N-Channel 55V 81A TO247AC International Rectifier IRFP054NPBF N-channel MOSFET Transistor, 81 A, 55 V, 3-Pin TO-247AC
![IRFP4227PBF](/files/uploads/product/s/d7f92ffee1e44f6ab2136ca345bb23e3.webp)
IRFP4227PBF
Part number IRFP4227PBF
![IRFR7540TRPBF](/files/uploads/product/s/67619d7b925143b8b917f33544a2bf21.webp)
IRFR7540TRPBF
Power Field-Effect Transistor
![IRFH5406TRPBF](/img/package/son8.jpg)
IRFH5406TRPBF
Bulk-packaged N-channel 60V 11A MOSFET in tape
![2N3906TF](/img/package/to92.jpg)
2N3906TF
2N3906 - PNP Transistor, TO-92, 0.2A, 40V
![IXFH21N50](/img/package/to247.jpg)
IXFH21N50
Silicon-based N-Channel Power FET: 21A Drain Current, 500V Voltage, 0.25ohm On-Resistance, TO-247AD Package, 3-Pin Configuration
![IRFS614B](/img/package/llp.jpg)
IRFS614B
The IRFS614B is packaged in TO-220F and complies with ROHS regulations
![SMMBT2907ALT3G](/img/package/sot23.jpg)
SMMBT2907ALT3G
600 milliamp 60 volt PNP silicon small signal transistor TO-236AB
![MMUN2211LT3G](/img/package/sot23.jpg)
MMUN2211LT3G
100mA 50V 500nA SOT-23 Digital Transistors ROHS 35@5mA,10V 1 NPN - Pre Biased 246mW
![KSP44BU](/img/package/to92.jpg)
KSP44BU
NPN Transistor with Epitaxial Silicon, 10000-BLKBG
![STA406A](/img/package/sip10.jpg)
STA406A
STA406A is a high-performance Trans Darlington NPN transistor designed for automotive applications
![MRFE6VP5600HR5](/img/package/sot.jpg)
MRFE6VP5600HR5
MRFE6VP5600HR5 - RF MOSFET Transistors VHV6 600W 50V NI1230H
![MJE5731AG](/img/package/to220.jpg)
MJE5731AG
MJE5731AG is a PNP transistor designed for general-purpose applications, with a maximum voltage rating of 375V and a maximum current rating of 1A