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PC28F640P33TF60A

EasyBGA-64(10x13)

数量 単価(USD) 合計金額
1 $14.571 $14.57
200 $5.814 $1,162.80
500 $5.620 $2,810.00
1000 $5.524 $5,524.00

在庫:8,900

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください PC28F640P33TF60A このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 PC28F640P33TF60A

The Intel-manufactured PC28F640P33TF60A flash memory component is a high-performance storage solution with a capacity of 64 megabits. Operating within a voltage range of 2.7 to 3.6 volts and boasting a read access time of 60 nanoseconds, this flash memory chip is optimized for speed and reliability. Its organization into 128 sectors, each encompassing 256 pages of 512 bytes, makes it suitable for a variety of electronic devices, including routers, switches, networking equipment, and industrial control systems. The chip's built-in hardware protection mechanism safeguards against accidental data corruption or loss, ensuring data integrity in critical applications. Moreover, the PC28F640P33TF60A supports advanced security features such as a unique device identifier and a user-configurable security register, enhancing data protection and privacy. Furthermore, its power-saving mode reduces energy consumption during idle periods, making it an environmentally friendly choice for energy-conscious applications

主な特長

  • High performance
  • — 85/88 ns initial access
  • — 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
  • — 25 ns asynchronous-page read mode
  • — 4-, 8-, 16-, and continuous-word burst mode
  • — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
  • — 1.8 V buffered programming at 7 µs/byte (Typ)
  • Architecture
  • — Multi-Level Cell Technology: Highest Density at Lowest Cost
  • — Asymmetrically-blocked architecture
  • — Four 32-KByte parameter blocks: top or bottom configuration
  • — 128-KByte main blocks
  • Voltage and Power
  • —VCC(core) voltage: 1.7 V – 2.0 V
  • —VCCQ (I/O) voltage: 1.7 V – 3.6 V
  • — Standby current: 55 µA (Typ) for 256-Mbit
  • — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
  • Quality and Reliability
  • — Operating temperature: –40 °C to +85 °C
  • 1-Gbit in SCSP is –30 °C to +85 °C
  • — Minimum 100,000 erase cycles per block
  • — ETOX™ VIII process technology (130 nm)
  • Security
  • — One-Time Programmable Registers:
  • 64 unique factory device identifier bits
  • 64 user-programmable OTP bits
  • Additional 2048 user-programmable OTP bits
  • — Selectable OTP Space in Main Array:
  • 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
  • — Absolute write protection: VPP= VSS
  • — Power-transition erase/program lockout
  • — Individual zero-latency block locking
  • — Individual block lock-down
  • Software
  • — 20 µs (Typ) program suspend
  • — 20 µs (Typ) erase suspend
  • —Intel® Flash Data Integrator optimized
  • — Basic Command Set and Extended Command Set compatible
  • — Common Flash Interface capable
  • Density and Packaging
  • — 64/128/256-Mbit densities in 56-Lead TSOP package
  • — 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
  • — 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
  • — 16-bit wide data bus

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category NOR Flash Mounting Style SMD/SMT
Memory Size 64 Mbit Supply Voltage - Min 2.3 V
Supply Voltage - Max 3.6 V Active Read Current - Max 28 mA
Interface Type Parallel Maximum Clock Frequency 52 MHz
Organization 4 M x 16 Data Bus Width 16 bit
Timing Type Asynchronous, Synchronous Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Brand Alliance Memory
Moisture Sensitive Yes Product Type NOR Flash
Factory Pack Quantity 300 Subcategory Memory & Data Storage

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金:90日以内

    返品・交換:90日以内

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    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

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