PSMN039-100YS,115
Trans MOSFET N-CH 100V 28.1A 5-Pin(4+Tab) LFPAK T/R
在庫:7,981
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : PSMN039-100YS,115
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パッケージ/ケース : SOT-669-5
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Brand : Nexperia
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Components Classification : Single FETs, MOSFETs
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日付シート : PSMN039-100YS,115 データシート (PDF)
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Series : PSMN039-100YS
概要 PSMN039-100YS,115
The PSMN039-100YS,115 from NXP Semiconductors is a Power MOSFET transistor that offers high performance in a compact package. With a maximum drain-source voltage of 100V and a continuous drain current of 160A, this transistor is designed for demanding applications where efficiency and reliability are paramount. The low on-state resistance of 2.8mOhm ensures minimal power loss, making it an excellent choice for high-power switching applications
主な特長
- Safe and reliable operation
- High temperature tolerance guaranteed
応用
- RF power amplifiers
- Sensor networks
- Wearable devices
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Nexperia | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOT-669-5 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 90 V | Id - Continuous Drain Current | 20 A |
Rds On - Drain-Source Resistance | 71 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 23 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 74 W | Channel Mode | Enhancement |
Brand | Nexperia | Product Type | MOSFET |
Factory Pack Quantity | 1500 | Subcategory | MOSFETs |
Part # Aliases | 934064535115 | Unit Weight | 0.003225 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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