PSMN1R4-40YLDX
With a maximum power dissipation of 238W and a threshold voltage of 2.2V at 1mA, this MOSFET is suitable for high-performance applications
在庫：6,934
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- 365日の品質保証
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部品番号 : PSMN1R4-40YLDX
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パッケージ/ケース : SOT669-5
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Brand : Nexperia Usa Inc.
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Components Classification : Single FETs, MOSFETs
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日付シート : PSMN1R4-40YLDX データシート (PDF)
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Series : PSMN1R4-40YLD
概要 PSMN1R4-40YLDX
The PSMN1R4-40YLDX MOSFET stands out for its ability to deliver consistent and stable power switching performance, thanks to its innovative design and quality construction. This product has undergone rigorous testing and qualification processes to ensure reliability and durability in diverse operating conditions. Engineers and designers can rely on this MOSFET for their high-performance applications that require a robust and efficient power switching solution
主な特長
- Fully compliant with AEC-Q101 and ISO/TS16949
- Excellent thermal resistance for low power consumption
- Limited inductance for minimized radiation susceptibility
応用
- Compact power supply design
- Efficient voltage regulation
- Precision power switching
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Type number | PSMN1R4-40YLD | Package version | SOT669 |
| Package name | LFPAK56; Power-SO8 | Product status | Production |
| Channel type | N | Nr of transistors | 1 |
| VDS [max] (V) | 40 | RDSon [max] @ VGS = 10 V (mΩ) | 1.4 |
| RDSon [max] @ VGS = 4.5 V (mΩ) | 1.85 | Tj [max] (°C) | 175 |
| ID [max] (A) | 240 | QGD [typ] (nC) | 13 |
| QG(tot) [typ] @ VGS = 4.5 V (nC) | 45 | QG(tot) [typ] @ VGS = 10 V (nC) | 96 |
| Ptot [max] (W) | 238 | Qr [typ] (nC) | 61 |
| VGSth [typ] (V) | 1.7 | Automotive qualified | N |
| Ciss [typ] (pF) | 6661 | Coss [typ] (pF) | 1543 |
| Date | 2014-04-11 | Packing | SOT669_115 |
| Orderable part number | PSMN1R4-40YLDX | Chemical content | PSMN1R4-40YLD |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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