RF4E110GNTR
Description: This product is an N-channel MOSFET transistor designed for switching applications
在庫：8,714
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : RF4E110GNTR
-
パッケージ/ケース : DFN-8
-
ブランド : Rohm Semiconductor
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : RF4E110GNTR データシート (PDF)
-
Series : RF4E110GN
概要 RF4E110GNTR
Designed for the modern era of wireless connectivity, the RF4E110GNTR operates within the 1.5 GHz to 2.5 GHz frequency range, making it compatible with a wide range of wireless standards including LTE, WiMAX, and 5G. Its compact form factor and low power consumption make it an ideal choice for integration into small devices such as smartphones, tablets, and IoT devices, without compromising on performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | DFN-2020-8 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 11 A | Rds On - Drain-Source Resistance | 11.3 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 7.4 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2 W |
| Channel Mode | Enhancement | Series | RF4E110GN |
| Brand | ROHM Semiconductor | Configuration | Single |
| Fall Time | 3 ns | Forward Transconductance - Min | 6 S |
| Product Type | MOSFET | Rise Time | 5.5 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 21 ns |
| Typical Turn-On Delay Time | 9 ns | Part # Aliases | RF4E110GN |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
RF4E080BNTR
30 Volts, 8 Amps, 17.6 Megaohms, PQFN 2X2
RRF015P03TL
Product RRF015P03TL is a 4V Drive P-channel MOSFET with a voltage rating of -30V, maximum on-state resistance of 160mΩ, maximum drain current of ±1
RF6C055BC
Description: MOSFET optimized for moderate power applications in PCH, offering -20V and -5.5A
RF4E070BNTR
High-performance automotive power transistor for rugged applications
RF4L040ATTCR
High-performance P-channel MOSFET for harsh environment applications, offering excellent surge immunity and fault toleranc
RF4L070BGTCR
Advanced N-channel MOSFET with V rating for demanding power management need
MMBTA56WT1G
3-Pin SC-70 PNP BJT Transistor 80V 0.5A T/R
NTMS7N03R2G
Lead-free N-channel MOSFET with a small signal, suitable for applications requiring a 4800mA, 30V rating
BSP171PH6327XTSA1
Product BSP171PH6327XTSA1 is a P Channel MOSFET with a voltage rating of 60V and a current rating of 1
IRFP31N50LPBF
500V 31A MOSFET with 180mΩ resistance at 19A and 10V
RD3L050SNFRATL
Low on-resistance
CM900DUC-24S
Dual diode isolated transistor module
SG2823L
Trans Darlington NPN 95V 0.5A 20-Pin CLLCC
BC547BTF
Transistor BC547BTF from Fairchild
JAN2N2222AUB
Certified for RoHS Compliance
IXTA02N450HV
High-Voltage Power MOSFET rated at 4500 volts and 200 milliamps