RJP020N06T100
Silicon-based field-effect transistor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.168 | $0.84 |
| 50 | $0.145 | $7.25 |
| 150 | $0.135 | $20.25 |
| 1000 | $0.123 | $123.00 |
| 2000 | $0.118 | $236.00 |
| 5000 | $0.114 | $570.00 |
在庫：6,419
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : RJP020N06T100
-
パッケージ/ケース : TO-243AA
-
ブランド : Rohm Semiconductor
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : RJP020N06T100 データシート (PDF)
-
Series : RJP020N06
概要 RJP020N06T100
The RJP020N06T100 MOSFET is built to withstand harsh operating conditions, with a maximum operating temperature of 150°C. This makes it suitable for use in automotive and industrial applications. The transistor is also compliant with MSL 1 - Unlimited standards, ensuring that it can be used in a wide range of environments without risk of damage. The RJP020N06T100 does not contain any SVHCs, making it a safe and environmentally friendly choice for your electronics projects
主な特長
- 1) Low On-resistance.
- 2) Low voltage drive (2.5V drive).
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 2A, 4.5V | Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4 V | Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 10 V | Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | MPT3 | Package / Case | TO-243AA |
| Base Product Number | RJP020 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
RJK005N03T146
30V N-Channel Surface Mount MosFet
RJU002N06FRAT106
MOSFET transistor with N-channel polarity, 60V drain-source voltage, 0.2A drain current, and 2.2 ohms drain-source on-resistance
RJK005N03FRAT146
TO-236-3 (SOT-23-3) package with 200mW power dissipation
RJ1U330AAFRGTL
Transistor MOSFET for Automotive Applications, N-Channel, 250V, 33A
AON3814
-DFN package housing multiple MOSFETs
IXTY08N50D2
Surface Mount N-Channel Depletion Mode Power MOSFET rated for 500V, with 800mA current and 4.6 ohms resistance - TO-252
NP100P04PLG-E1-AY
NP100P04PLG-E1-AY
DTA043EEBTL
The description for DTA043EEBTL indicates it is a component rated at -0.1A and housed in an SOT-416FL casing
Q6010L5
10A Triacs rated for 600V with a gate trigger current of 50-50-50mA
DMP210DUFB4-7
X2-DFN1006-3 ROHS
ACST830-8GTR
ACST830-8GTR Product Description: Thyristor TRIAC 800V 84A 3-Pin(2+Tab) D2PAK T/R
IRFI640GPBF
HEXFET N-Channel MOSFET with a voltage rating of 200V
BCP69T1
BCP69T1: PNP Bipolar Junction Transistor, 20 Volts, 1 Amp, Surface Mount, Tape and Reel
ZXMP6A13F
Product ZXMP6A13F is an Enhancement Mode P-Channel MOSFET, here's its description:"