• packageimg
packageimg

RRR030P03TL

Product RRR030P03TL: P-Channel Silicon MOSFET with a 30V Voltage Rating and 3A Current Capacity

数量 単価(USD) 合計金額
5 $0.145 $0.72
50 $0.125 $6.25
150 $0.117 $17.55
500 $0.106 $53.00
3000 $0.102 $306.00
6000 $0.099 $594.00

在庫：7,613

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください RRR030P03TL このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 RRR030P03TL

The RRR030P03TL is a cutting-edge 4V Drive Pch MOSFET that boasts a low ON-resistance, thanks to the innovative micro-processing technologies used in its production. This high-performance power MOSFET is designed to cater to a wide range of applications, making it an ideal choice for various industries. Whether you need a compact type for space-constrained projects, a high-power type for heavy-duty tasks, or a complex type for advanced applications, this product has you covered

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (Abs) (ID) 3 A
Drain Current-Max (ID) 3 A Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G3
JESD-609 Code e1 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN SILVER COPPER Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

ISL9V3040D3ST

ISL9V3040D3ST

The ISL9V3040D3ST chip is an insulated gate bipolar transistor (IGBT) module
2SK3482-Z-E1-AZ

2SK3482-Z-E1-AZ

Nch Single Power Mosfet 100V 36A 33Mohm Mp-3Z/To-252
IRFP350PBF

IRFP350PBF

47AC N-MOSFET Transistor, unipolar, 400V, 10A, 190W
2N2060

2N2060

Compact power management for small devices and system
IXFN320N17T2

IXFN320N17T2

The IXFN320N17T2 MOSFETs are ROHS-compliant and come in a SOT-227B package for optimal performance
IRF9533

IRF9533

This MOSFET has a threshold voltage of 4V at 250uA and is compliant with ROHS regulations
SI1012X-T1-GE3

SI1012X-T1-GE3

MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
MJE340STU

MJE340STU

Silicon Epitaxial NPN Bipolar Transistors
IRLR9343TRPBF

IRLR9343TRPBF

HEXFET P-channel MOSFET designed for applications requiring efficient power management at a voltage of 30 volts
MJD127T4

MJD127T4

Featuring a Darlington configuration, product MJD127T4 is a PNP transistor capable of handling up to 100V and 8A