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RV8L002SNHZGG2CR

Trans MOSFET N-CH 60V 0.25A Automotive 3-Pin DFN-W

数量 単価(USD) 合計金額
1 $0.183 $0.18
200 $0.071 $14.20
500 $0.068 $34.00
1000 $0.067 $67.00

在庫：9,583

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
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迅速な見積もり

見積もりリクエストを送信してください RV8L002SNHZGG2CR このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 RV8L002SNHZGG2CR

The RV8L002SNHZG ultra-compact MOSFET is engineered to provide unmatched mounting reliability, making it an ideal choice for automotive applications. With AEC-Q101 qualification, this MOSFET is designed to ensure automotive-grade reliability and performance even in the most challenging conditions. Notably, ROHM's original Wettable Flank formation technology guarantees consistent solder quality, particularly for bottom electrode type products, allowing for easy verification of solder conditions after mounting using automatic inspection machines. This feature is invaluable for manufacturers looking to enhance production efficiency and uphold superior quality. In automotive components such as ECU and ADAS camera modules, where miniaturization is pivotal, the RV8L002SNHZG MOSFET delivers high-quality performance and reliability. With its advanced design and innovative technology, the RV8L002SNHZG sets a new standard for compact yet supremely reliable MOSFET solutions in automotive applications

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta) Rds On (Max) @ Id, Vgs 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15 pF @ 25 V Power Dissipation (Max) 1W (Ta)
Operating Temperature 150°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount
Supplier Device Package DFN1010-3W Package / Case DFN-3
Base Product Number RV8L002 Manufacturer ROHM Semiconductor
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 250 mA Rds On - Drain-Source Resistance 2.4 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.3 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1 W Channel Mode Enhancement
Brand ROHM Semiconductor Fall Time 28 ns
Forward Transconductance - Min 250 mS Product Type MOSFET
Rise Time 5 ns Factory Pack Quantity 100
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 18 ns Typical Turn-On Delay Time 3.5 ns
Part # Aliases RV8L002SNHZG

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    部品の品質保証: 365 日

    返品・返金：90日以内

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