S29JL064J55TFI000

When it comes to durability, the S29JL064J55TFI000 doesn't disappoint. Designed to withstand rigorous conditions and constant use, this flash memory chip is built to last. Its high endurance ensures long-term reliability, making it an ideal choice for mission-critical applications where data integrity is paramount

主な特長

• Standard configuration
• Data can be continuously read from one bank while executing erase/program functions in another bank
• Zero latency between read and write operations
• Flexible bank architecture
• Read may occur in any of the three banks not being programmed or erased
• Four banks may be grouped by customer to achieve desired bank divisions
• Top and bottom boot sectors in the same device
• Any combination of sectors can be erased
• Manufactured on 0.11µm process technology
• Secured silicon region - Extra 256-byte sector
• Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
• Compatible with JEDEC standards
• Pinout and software compatible with single-power-supply flash standard
• High performance
• Program time - 7µs/word typical using accelerated programming function
• Ultralow power consumption
• Cycling endurance - 1million cycles per sector typical
• Data retention - 20 years typical
• Supports common flash memory interface
• Erase suspend/erase resume

応用

• Computers & Computer Peripherals
• Industrial
• Communications & Networking
• Consumer Electronics