SI2305B-TP
-4.2A current capacity and 1.4W power dissipation
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部品番号 : SI2305B-TP
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パッケージ/ケース : SOT-23
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Brand : MCC
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Components Classification : Single FETs, MOSFETs
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日付シート : SI2305B-TP データシート (PDF)
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Series : TRENCHFET
概要 SI2305B-TP
The P-channel design of the SI2305B-TP allows for easy integration with N-channel MOSFETs in complementary configurations, offering flexibility in circuit designs. Its compact package size and low on-resistance make it an excellent choice for space-constrained designs, where efficient power management is crucial
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | MICRO COMMERCIAL COMPONENTS CORP | Package Description | , |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 4.2 A | Drain-source On Resistance-Max | 0.039 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 190 pF |
JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 1.4 W |
Pulsed Drain Current-Max (IDM) | 21 A | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 10 |
Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 57 ns |
Turn-on Time-Max (ton) | 27 ns |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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