SPP80P06PHXKSA1
Infineon SPP80P06PHXKSA1 P-channel MOSFET Transistor, 80 A, 60 V, 3+Tab-Pin PG-TO-220-3
在庫：7,526
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部品番号 : SPP80P06PHXKSA1
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パッケージ/ケース : TO-220-3
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : SPP80P06PHXKSA1 データシート (PDF)
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Series : SPP80P06P-H
概要 SPP80P06PHXKSA1
The SPP80P06PHXKSA1 is a high-performance power field-effect transistor with a current rating of 91A and a voltage rating of 60V. With a low on-state resistance of 0.023ohm, this P-channel semiconductor device is ideal for a variety of power management applications. The TO-220AB package ensures efficient heat dissipation while the green plastic housing provides durability and protection. This transistor features a metal-oxide semiconductor construction, making it reliable and robust for long-term use. With its 3-pin configuration, the SPP80P06PHXKSA1 is easy to install and integrate into electronic circuits
主な特長
- N channel
- Enhancement mode
- Avalanche rated
- dv/dt rated
- 175°C operating temperature
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | SIPMOS® | Package | Tube |
| Product Status | Active | FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 64A, 10V | Vgs(th) (Max) @ Id | 4V @ 5.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 173 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5033 pF @ 25 V | Power Dissipation (Max) | 340W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 | Package / Case | TO-220-3 |
| Base Product Number | SPP80P06 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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