SPW20N60CFD
Description of SPW20N60CFD N-Channel MOSFET Transistor
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $10.011 | $10.01 |
200 | $3.874 | $774.80 |
500 | $3.737 | $1,868.50 |
1000 | $3.671 | $3,671.00 |
在庫:6,408
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SPW20N60CFD
-
パッケージ/ケース : TO-247
-
ブランド : INFINEON
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : SPW20N60CFD データシート (PDF)
概要 SPW20N60CFD
Featuring a single-element design, the N-channel Silicon Metal-oxide Semiconductor FET offers robust performance and enhanced durability. Housed in a TO-247 package, this transistor boasts a GREEN, PLASTIC PACKAGE-3 that provides protection and stability. Its innovative technology allows for seamless integration into circuit designs, enabling smooth operation and optimal functionality
主な特長
Maximum operating temperature: + 150C
Technology: Si
Series: CoolMOS CFD
Mounting-style: Through hole
Channel-mode: Enhancement
Vgs-Gate-Source-Voltage: 20 V
ID (drain current): 20.7 A
Tradename: CoolMOS
Fall-time: 6.4 ns
応用
: The INFINEON FETs - Single SPW20N60CFD is ideally suited for use in applications that require a robust and reliable high-speed switching device with a maximized current rating. These applications include use in power supplies, DC-DC converters, motor controls, and switching converters.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 20.7 A |
Rds On - Drain-Source Resistance | 220 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 5 V | Qg - Gate Charge | 95 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 208 W | Channel Mode | Enhancement |
Tradename | CoolMOS | Series | CoolMOS CFD |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 6.4 ns | Height | 21.1 mm |
Length | 16.13 mm | Product Type | MOSFET |
Rise Time | 15 ns | Factory Pack Quantity | 240 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 59 ns | Typical Turn-On Delay Time | 12 ns |
Width | 5.21 mm | Part # Aliases | SP000014535 SPW2N6CFDXK SPW20N60CFDFKSA1 |
Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BSP315PH6327XTSA1](/files/uploads/product/s/ebd9f8bebc2d4ce3bf45948f9fbebd2b.webp)
BSP315PH6327XTSA1
X7R 10% Soft Term Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt
![BSP88H6327XTSA1](/img/package/sot23.jpg)
BSP88H6327XTSA1
INFINEON SMD MOSFET, NFET, 240V, 350mA, 6 Ohms, 150°C, TO-261 BSP88
![ISP650P06NMXTSA1](/img/package/sot23.jpg)
ISP650P06NMXTSA1
Product ISP650P06NMXTSA1 is a P-Channel MOSFET in the ISP650 Series with a voltage rating of 60V and a current rating of 3.7A
![BSP295H6327XTSA1](/img/package/sot23.jpg)
BSP295H6327XTSA1
4-pin SOT-223 package N-type MOSFET suitable for automotive use with 60V maximum voltage
![SPD15P10PL G](/img/package/to-3.jpg)
SPD15P10PL G
DPAK-2 packaged MOSFET with P-Channel polarity, rated for -100V and 15A
![SPW47N60C3](/img/package/to247.jpg)
SPW47N60C3
Transistor SPW47N60C3: N-MOSFET, unipolar, 650V, 47A, 415W, PG-TO247-3
![BSP171P H6327](/img/package/sot23.jpg)
BSP171P H6327
Characterized by its P-channel architecture, BSP171P H6327 represents a small-signal MOSFET, engineered to manage currents up to 1
![SPA02N80C3](/img/package/to220.jpg)
SPA02N80C3
SPA02N80C3: N-Channel MOSFET Transistor - Engineered to provide superior conductivity and reliability in a variety of electronic applications
![IRLZ44NSPBF](/img/package/d2pak.jpg)
IRLZ44NSPBF
N-Channel 55V MOSFET with 47A Current Rating in D2PAK Package
![NTD6416ANT4G](/img/package/dpak.jpg)
NTD6416ANT4G
100V N-Channel Trans MOSFET with 17A current rating and DPAK package
![SSM3K35AMFV,L3F](/img/package/sot23.jpg)
SSM3K35AMFV,L3F
MOSFET Transistor with N-type Channel, Suitable for Low-Power Applications at 20V
![BSS315PH6327XTSA1](/img/package/sot23.jpg)
BSS315PH6327XTSA1
INFINEON BSS315PH6327XTSA1 - a reliable and efficient power MOSFET
![APT5010JN](/img/package/sot.jpg)
APT5010JN
APT5010JN POWER MOSFET TRANSISTOR
![IXGN200N60B3](/img/package/sot.jpg)
IXGN200N60B3
G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A
![MTM232270LBF](/img/package/sot23.jpg)
MTM232270LBF
The MOSFET N-channel transistor MTM232270LBF by Panasonic is a high-performance component, capable of handling 2A of current and 20V of voltage
![IRLHM620TRPBF](/img/package/pqfn8.jpg)
IRLHM620TRPBF
PQFN 3.3 x 3.3 mm Single N-Channel 20V 2.7W Power Mosfet with 52nC Gate Charge
![LM394BH](/img/package/to99.jpg)
LM394BH
LM394BH is a semiconductor device utilized as a bipolar transistor in electronic circuits
![DMT6004LPS-13](/img/package/power33.jpg)
DMT6004LPS-13
22A continuous drain current capability
![IXGH40N120C3D1](/img/package/to247ad.jpg)
IXGH40N120C3D1
Transistor with IGBT technology, 1.2kV voltage rating, 40A current rating, and 380W power handling capacity in a TO247-3 package