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VN0106N3

60-volt MOSFET with a resistance of 3 Ohms

在庫：9,124

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概要 VN0106N3

Advanced DMOS TechnologyThese enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.Features❏ Free from secondary breakdown❏ Low power drive requirement❏ Ease of paralleling❏ Low CISS and fast switching speeds❏ Excellent thermal stability❏ Integral Source-Drain diode❏ High input impedance and high gain❏ Complementary N- and P-channel devicesApplications❏ Motor controls❏ Converters❏ Amplifiers❏ Switches❏ Power supply circuits❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS N
Technology Si Mounting Style Through Hole
Package / Case TO-92-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 350 mA Rds On - Drain-Source Resistance 3 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1 W
Channel Mode Enhancement Brand Microchip Technology
Configuration Single Fall Time 5 ns
Height 5.33 mm Length 5.21 mm
Product Type MOSFET Rise Time 5 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type FET
Typical Turn-Off Delay Time 6 ns Typical Turn-On Delay Time 3 ns
Width 4.19 mm Unit Weight 0.016000 oz

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    部品の品質保証: 365 日

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