ZVN4310GTA
Power Field-Effect Transistor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.915 | $0.92 |
| 10 | $0.774 | $7.74 |
| 30 | $0.697 | $20.91 |
| 100 | $0.609 | $60.90 |
| 500 | $0.570 | $285.00 |
| 1000 | $0.553 | $553.00 |
在庫：6,619
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : ZVN4310GTA
-
パッケージ/ケース : TO-261-4
-
Brand : Diodes Incorporated
-
Components Classification : Single FETs, MOSFETs
-
日付シート : ZVN4310GTA データシート (PDF)
-
Series : ZVN4310
概要 ZVN4310GTA
N-Channel 100 V 1.67A (Ta) 3W (Ta) Surface Mount SOT-223-3
主な特長
- V(BR)DSS> 100V
- RDS(ON) ≤ 0.54Ω @ VGS = 10V
- Maximum Continuous Drain Current ID = 1.67A
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1.67A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 3.3A, 10V | Vgs(th) (Max) @ Id | 3V @ 1mA |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
| Power Dissipation (Max) | 3W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | SOT-223-3 |
| Package / Case | TO-261-4, TO-261AA | Base Product Number | ZVN4310 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
ZVN4306AV
Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line
ZVN0545A
FET VERTICAL ENHANCEMENT N-CHANNEL MODE DMOS
ZVN4210A
Trans MOSFET N-CH 100V 0.45A 3-Pin E-Line
ZVNL120A
N-channel MOSFET,ZVNL120A 0.18A 200V
ZVP3306FTA
pin surface-mount transistor for use in electronic circuits
ZVP3310F
P-channel MOSFET with a continuous drain current of 75mA and a source voltage of -100V, featuring an on resistance of 20ohm
ZVP4424GTA
High-power SOT-223 P-Channel FET with 0.48A drain current and 11ohm resistance
ZVN4310G
With its SOT223 packaging, this MOSFET offers a compact and reliable solution for circuit designs that require N-channel power transistors
ZVN4525ZTA
Transistor metal-oxide-semiconductor field-effect transistor with a N-channel, 200 volts, and 0.24 amperes
ZVP0535A
The ZVP0535A transistor is a metal-oxide semiconductor FET that operates as a P-Channel device
BTB41-800BRG
TRIAC 800V 420A 3-Pin(3+Tab) TOP Tube
BC141-10
Epitaxial Planar Transistors
2SD2351T106V
50V 150mA NPN BJT transistors
IRL530NPBF
N-Channel MOSFET
IRF7413PBF
Channel MOSFET Transistor in SO package
BSP52T1G
NPN Small-Signal Darlington Transistor
BC847CW,115
small plastic package housing general-purpose npn transistors in a surface-mount design
AT-64023
RF Bipolar Transistors Transistor Si - AT-64023
BTA08-600CRG
TRIAC 600V 8A(RMS) 84A 3-Pin(3+Tab) TO-220AB Tube
PMV40UN,215
N-Channel MOSFET Transistor, 4.9 A, 30 V, 3-Pin SOT-23 NXP PMV40UN,215