|
CSD17483F4
|
Trans MOSFET N-CH 30V 1.5A 3-Pin PicoStar T/R |
TI |
8,690 |
|
|
CSD17382F4
|
Ultra-reliable and highly efficient switching soluti |
Texas Instruments |
6,407 |
|
|
CSD23381F4
|
Trans MOSFET P-CH 12V 2.3A 3-Pin PicoStar T/R |
Texas Instruments |
7,609 |
|
|
CSD23382F4
|
Trans MOSFET P-CH 12V 3.5A 3-Pin PicoStar T/R |
TI |
5,920 |
|
|
DMN2990UFA-7B
|
MOSFET with 8V-24V breakdown voltage |
Diodes Incorporated |
9,589 |
|
|
NX7002BKHH
|
N-type Trench MOSFET with 60 V |
Nexperia USA Inc. |
6,353 |
|
|
NX7002BKMBYL
|
Trench N-MOSFET transistor with unipolar characteristics, rated for 60 volts and 0 |
Nexperia USA Inc. |
9,743 |
|
|
PMH600UNEH
|
PMH600UNE Series 20V N-Channel Trench MOSFET with 800mA and 620mΩ |
Nexperia USA Inc. |
7,818 |
|
|
RV3C002UNT2CL
|
0V N-channel 0.15A VML 3-pin T/R |
Rohm Semiconductor |
8,813 |
|
|
CSD25484F4
|
Efficient energy transfer for demanding applicatio |
TI |
6,668 |
|
|
CSD23285F5
|
Trans MOSFET P-CH 12V 5.4A 3-Pin PicoStar T/R |
TI |
9,120 |
|
|
CSD13380F3
|
Trans MOSFET N-CH 12V 3.6A 3-Pin PicoStar T/R |
TI |
5,119 |
|
|
CSD17382F4T
|
This MOSFET has a power dissipation of 500mW at 8V and a VGS(th) of 1.2V at 250uA |
Texas Instruments |
5,656 |
|
|
TF412ST5G
|
Trans JFET N-CH 30V 10mA 3-Pin SOT-883 T/R |
onsemi |
6,399 |
|
|
DMN2005LP4K-7
|
20V 200mA N-Channel MOSFETs |
Diodes Incorporated |
8,716 |
|
|
DMN3730UFB4-7
|
N-channel metal-oxide-semiconductor field-effect transistor with a 30V voltage rating and 0 |
Diodes Incorporated |
5,623 |
|
|
CSD25481F4T
|
P-channel MOSFET in PicoStar package with 3 pins, capable of handling 20V and 2.5A |
Texas Instruments |
5,467 |
|
|
CSD17484F4T
|
A 30V 121mΩ@500mA, 500mW 8V 1.1V@250uA null PicoStar-3 MOSFETs ROHS |
Texas Instruments |
6,798 |
|
|
DMP21D5UFB4-7B
|
MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K |
Diodes Incorporated |
9,494 |
|
|
DMN2400UFB4-7
|
Trans MOSFET N-CH 20V 0.75A 3-Pin DFN T/R |
Diodes Incorporated |
7,866 |
|
|
2N7002BKMB,315
|
Power Field-Effect Transistor, 0.45A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
Nexperia USA Inc. |
8,085 |
|
|
ESD122DMXR
|
ESD Suppressor Diode TVS Bi-Dir 3.6V 8.4Vc 3-Pin X2SON T/R |
TI |
6,979 |
|
|
PDTA114YMB,315
|
Precise control and high reliability come together in this PNP transistor equipped with kΩ and kΩ resistor |
Nexperia USA Inc. |
9,217 |
|
|
PDTA123EMB,315
|
With Rand Rboth set to kΩ, this transistor excels at detecting subtle changes in input current |
Nexperia USA Inc. |
8,106 |
|
|
PDTA123JMB,315
|
Compact and efficient PNP BJT for modern electronic |
Nexperia USA Inc. |
5,881 |
|
|
PDTA144VMB,315
|
AEC-Qcompliant digital BJT for high-performance and safety-critical system |
Nexperia USA Inc. |
9,612 |
|
|
PDTC124TMB,315
|
Bipolar Transistors - Pre-Biased PDTC124TMB/SOT883B/XQFN3 |
Nexperia USA Inc. |
6,821 |
|
|
PDTC144TMB,315
|
High-reliability automotive transistor suitable for various application |
Nexperia USA Inc. |
9,898 |
|
|
PMBT2907AMBYL
|
High-voltage, high-current PNP transistor for reliable switching application |
Nexperia USA Inc. |
8,720 |
|
|
PMCB60XNEZ
|
Streamline your workflow with precision and ease |
Nexperia USA Inc. |
9,554 |
|
|
PMZB350UPE,315
|
Rugged P-Channel MOSFET for reliable DC/DC converter designs |
Nexperia USA Inc. |
8,740 |
|
|
PDTA123TMB,315
|
This transistor-resistor module boasts a compact design, incorporating two discrete components (R= kΩ, R= open) for added versatilit |
Nexperia USA Inc. |
6,882 |
|
|
NX138BKHH
|
This SOT8 packaged MOSFET offers a compact design making it ideal for use in space-constrained systems while still delivering reliable performance |
Nexperia USA Inc. |
7,543 |
|
|
BFU730LXZ
|
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R |
NXP USA Inc. |
8,984 |
|
|
PDTC115TMB,315
|
Compact XQFN3 packaging minimizes board space |
Nexperia USA Inc. |
8,628 |
|
|
NTNS3166NZT5G
|
High-power switching device for demanding application |
onsemi |
8,541 |
|
|
PMCB60XNZ
|
Trans MOSFET N-CH 30V 4A 3-Pin DSN T/R |
Nexperia USA Inc. |
5,517 |
|
|
NTNS3A67PZT5G
|
MOSFET PFET SOT883 20V 281MA 1.3 |
onsemi |
6,849 |
|
|
PDTA144WMB,315
|
Bipolar Transistors - Pre-Biased PDTA144WMB/SOT883B/XQFN3 |
Nexperia USA Inc. |
7,616 |
|
|
CSD25483F4T
|
Trans MOSFET P-CH 20V 1.6A 3-Pin PicoStar T/R |
TI |
7,228 |
|
|
CSD25484F4T
|
Trans MOSFET P-CH 20V 2.5A 3-Pin PicoStar T/R |
TI |
9,335 |
|
|
ESD5102FCT5G
|
ESD Suppressor Diode TVS Bi-Dir 3.3V 6.5Vc 3-Pin DSN T/R |
onsemi |
7,387 |
|
|
DMP2043UCA3-7
|
Precise control and high current handling make this MOSFET ideal for various DC-DC converters |
Diodes Incorporated |
8,110 |
|
|
RV2E014AJT2CL
|
Instant Dispatch, Free Shipping Available! - D/ |
Rohm Semiconductor |
6,251 |
|
|
NTNS3190NZT5G
|
Ideal for use in power management, switching regulators and motor control |
onsemi |
6,830 |
|
|
CSD13381F4T
|
Trans MOSFET N-CH 12V 2.1A 3-Pin PicoStar T/R |
TI |
8,063 |
|
|
CSD25480F3T
|
Trans MOSFET P-CH 20V 1.7A 3-Pin PicoStar T/R |
TI |
6,453 |
|
|
DMN2991UFZQ-7B
|
20V N-Channel Enhancement Mode MOSFET |
Diodes Incorporated |
7,054 |
|
|
DMN3061LCA3-7
|
MOSFET MOSFET BVDSS: 25V~30V X4-DSN1006-3 T&R 10K |
Diodes Incorporated |
6,665 |
|
|
DMN31D4UFZ-7B
|
MOSFET MOSFET BVDSS: 25V~30V X2-DFN0606-3 T&R 10K |
Diodes Incorporated |
5,864 |
|
