BC847BW
|
Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SOT-323 T/R |
Yangjie Technology |
5,569 |
|
BC847CW
|
Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SOT-323 T/R |
Yangjie Technology |
3,945 |
|
DMN3150LW-7
|
Small Signal Field-Effect Transistor |
Diodes Incorporated |
4,354 |
|
DMN65D8LW-7
|
N-Channel MOSFET with a 300 mA current rating and 60 V voltage tolerance |
Diodes Incorporated |
5,563 |
|
DMN67D8LW-13
|
Transistor MOSFET for N-Channel Operation at 60 Volts and 0.24 Amperes |
Diodes Incorporated |
7,981 |
|
BAW56W
|
Rectifier Diode Small Signal Switching 85V 0.15A 4ns 3-Pin SOT-323 T/R |
Diotec Semiconductor AG |
5,045 |
|
BAV99W
|
Diode Small Signal Switching 85V 0.15A 3-Pin SOT-323 T/R |
Diodes Incorporated |
6,569 |
|
BC817-40W
|
Trans GP BJT NPN 45V 0.5A 200mW 3-Pin SOT-323 T/R |
Yangjie Technology |
8,630 |
|
BAS70-05W,115
|
Dual BAS70-05W Schottky Barrier Diode |
Nexperia |
8,788 |
|
BAV70W
|
High speed switching diode ideal for power conversion and control circuit |
Diodes Incorporated |
8,274 |
|
BC857CW,115
|
The BC857CW,115 transistor is suitable for a variety of electronic applications requiring PNP bipolar transistors |
Nexperia |
8,067 |
|
BC846BW
|
Trans GP BJT NPN 65V 0.1A 200mW 3-Pin SOT-323 T/R |
Yangjie Technology |
7,333 |
|
BC846AW
|
NPN, 65V, 0.1A, SOT323 |
Yangjie Technology |
7,419 |
|
BSS816NW
|
The BSSW transistor provides reliable performance in a wide range of electronic systems and device |
Infineon |
6,483 |
|
DTC114TUA
|
High-quality digital transistors for precise control of small signals |
Yangjie Technology |
6,283 |
|
SSM3J115TU
|
High-power transistor for demanding application |
Toshiba |
7,562 |
|
SN7002W
|
Automotive-grade N-channel MOSFET capable of handling up to 60 volts and 0 |
Infineon Technologies AG |
5,468 |
|
SDMG0340LS-7-F
|
SOT-323 Surface Mount SDM Series Schottky Barrier Diode with 30 mA, 40 V |
Diodes Incorporated |
5,828 |
|
RN1303
|
USM PLN(LF) Pre-Biased Bipolar Transistors |
Toshiba |
8,586 |
|
RN2304
|
Three-Pin Transistor for Small Signal Amplification |
Toshiba |
9,471 |
|
ESD1P0RFW
|
Automotive ESD Suppressor Diode Array Uni-Dir 70V 15Vc 3-Pin SOT-323 T/R |
INFINEON |
4,547 |
|
DMN601WK-7
|
This MOSFET has a power dissipation of 200mW and a 2Ω resistance at 10V |
Diodes Incorporated |
3,915 |
|
DMN2004WK-7
|
type metal-oxide-semiconductor field-effect transistor |
Diodes Incorporated |
4,993 |
|
DDTC144EUA-7-F
|
00 mA current rating, 50 V voltage rating, 47 kΩ resistance |
Diodes Incorporated |
6,493 |
|
DTC113ZUA
|
Precise engineering and quality control ensure optimal performance in electronic designs |
Yangjie Technology |
4,959 |
|
BC859CW
|
Compact SOT-package ideal for space-restricted design |
Diotec Semiconductor |
3,725 |
|
SSM3J16FU
|
High-performance automotive grade MOSFET for reliable power control application |
Toshiba |
9,487 |
|
BSS214NW
|
Miniature Field-Effect Transistor" |
infineon |
7,084 |
|
2SD2656
|
Product description |
ROHM Semiconductor |
7,335 |
|
DESD1P0RFWQ-7
|
Silicon-based Transient Voltage Suppressor Diode with 70V Reverse Working Voltage, Unidirectional Configuration, Green Plastic Package-3 |
Diodes Incorporated |
6,172 |
|
DESD1CAN2WQ-7
|
SOT323 PP general protection in tape and reel packaging |
Diodes Incorporated |
8,423 |
|
BSS138W-TP
|
SOT-323 Packaged N-Channel MOSFET Transistor rated for 50V and 0.22A with Tape and Reel Packaging |
MCC |
5,909 |
|
BC847AW
|
NPN, 45V, 0.1A, SOT323 |
Yangjie Technology |
4,529 |
|
DMN3065LW-7
|
Diodes Inc DMN3065LW-7 N-channel MOSFET Transistor, 4 A, 30 V, 3-Pin SOT-323 |
Diodes Incorporated |
5,469 |
|
DMN5L06WK-7
|
Diodes Inc DMN5L06WK-7 N-channel MOSFET Transistor, 0.3 A, 50 V, 3-Pin SOT-323 |
Diodes Incorporated |
7,700 |
|
BC817-40W-7
|
Bipolar Transistors - BJT NPN SURFACE MOUNT SMALL SIGNAL TRANS |
Diodes Incorporated |
5,004 |
|
BC807-25W
|
Trans GP BJT PNP 45V 0.5A 3-Pin SOT-323 T/R |
Yangjie Technology |
8,232 |
|
BC817-25W
|
NPN, 45V, 0.5A, SOT323 |
Yangjie Technology |
5,585 |
|
BC849CW
|
Bipolar Transistors - BJT |
Diotec Semiconductor |
6,389 |
|
BC857BW
|
PNP, 45V, 0.1A, SOT323 |
Yangjie Technology |
8,356 |
|
1SV314
|
High Capacitance Ratio : C0.5V / C2.5V = 2.5 (Typ.) |
TOSHIBA |
6,417 |
|
BC856BW
|
PNP, 65V, 0.1A, SOT323 |
Yangjie Technology |
6,767 |
|
RYU002N05T306
|
ROHM Semiconductor |
ROHM |
5,311 |
|
BAT46AWFILM
|
Diode Small Signal Schottky 100V 0.15A 3-Pin SOT-323 T/R |
Stmicroelectronics |
3,998 |
|
BAS70-05WFILM
|
Diode RF Schottky 70V 3-Pin SOT-323 T/R |
Stmicroelectronics |
6,249 |
|
MSQA6V1W5T2G
|
ROHS Compliant Electrostatic and Surge Protection |
onsemi |
6,382 |
|
BC817-16W-AU_R1_000A1
|
Advanced NPN BJT with high current gain and fast switching performan |
Panjit |
9,129 |
|
BC849CW_R1_00001
|
Robust performance and wide operating temperature rang |
Panjit |
5,598 |
|
BC807-16W_R1_00001
|
Robust and reliable PNP transistor for sensitive electronic |
Panjit |
6,678 |
|
BC857BW_R1_00001
|
Wide voltage range of to V for various circuitry configuration |
Panjit |
8,642 |
|