|
DTC114EUAT106
|
Bipolar transistors pre-biased digital NPN SOT-323 50V 50mA |
Rohm Semiconductor |
5,341 |
|
|
2N7002W
|
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-323 T/R |
onsemi |
5,377 |
|
|
DMP2165UW-7
|
Established French Electronics Provider |
Diodes Incorporated |
5,005 |
|
|
DMP2160UW-7
|
Small Signal Field-Effect Transistor |
Diodes Incorporated |
8,100 |
|
|
2SC4081T106Q
|
Bipolar Transistors - BJT NPN 50V 0.15A SOT-32 3 |
ROHM Semiconductor |
5,407 |
|
|
DMN63D8LW-13
|
Enhancement Mode N-Channel MOSFET featuring 30V VDS and 20±V VGS |
Diodes Incorporated |
6,770 |
|
|
BAS40-04W,115
|
Diode Schottky BAS40-04W,115 with 0.12A and 3 pins in SC-70 package |
Nexperia USA Inc. |
8,541 |
|
|
DMN2065UW-7
|
SOT-323 packaged N-channel MOSFET with 20V voltage rating, 2.8A current rating, supplied on tape and reel |
Diodes Incorporated |
8,245 |
|
|
ESDCAN02-2BWY
|
ESD Suppressor Diode TVS Bi-Dir 26.5V 44Vc Automotive AEC-Q101 3-Pin SOT-323 T/R |
ST |
6,521 |
|
|
ESDCAN04-2BWY
|
ESD Suppressor Diode TVS Bi-Dir 25.5V 43Vc Automotive AEC-Q101 3-Pin SOT-323 T/R |
ST |
7,050 |
|
|
MCH3478-TL-W
|
Channel MOSFET Transistor 30V 2A 3-Pin |
onsemi |
8,695 |
|
|
NX7002AKW,115
|
Field-effect transistor NX7002AKW/SOT323/SC-70 |
Nexperia |
7,027 |
|
|
RAL035P01TCR
|
Described as a Silicon Metal-oxide Semiconductor FET, RAL035P01TCR is a P-channel transistor capable of handling currents up to 3 |
Rohm Semiconductor |
9,415 |
|
|
RU1C001UNTCL
|
Single-element silicon transistor ideal for implementing as a switch or amplifier in electronic circuits |
Rohm Semiconductor |
5,610 |
|
|
SI1308EDL-T1-GE3
|
N-channel MOSFET rated for 1.4A and 30V, housed in an SC70 package |
Vishay |
6,499 |
|
|
ESDCAN06-2BWY
|
ESD Suppressor Diode TVS Bi-Dir 35V 59Vc Automotive AEC-Q101 3-Pin SOT-323 T/R |
ST |
6,760 |
|
|
BAV199W,115
|
Diode Switching 85V 0.135A 3-Pin SC-70 T/R |
Nexperia USA Inc. |
8,604 |
|
|
ESDCAN03-2BWY
|
ESD Suppressor TVS Bi-Dir 24V Automotive AEC-Q101 3-Pin SOT-323 T/R |
ST |
6,027 |
|
|
RHU002N06T106
|
Small Signal N-Channel MosFet in UMT-3 Package, Rated for 200 mW Power, 60 V Voltage, and 2.4 Ohm Resistance |
Rohm Semiconductor |
9,961 |
|
|
BAV99W,115
|
ROHS compliant SOT-323-3 package containing two 1.25V diodes |
Nexperia |
8,978 |
|
|
BCR198W
|
Pre-Biased Bipolar Transistors |
Infineon |
6,591 |
|
|
BC847CW,115
|
small plastic package housing general-purpose npn transistors in a surface-mount design |
Nexperia |
7,490 |
|
|
BC846BW,115
|
BC846BW,115 - Bipolar Junction Transistor (BJT) BC846BW/SOT323/SC-70 |
Nexperia USA Inc. |
7,711 |
|
|
2N7002W-7-F
|
323 for easy installation and handling |
Diodes Incorporated |
7,284 |
|
|
2SC4081T106R
|
Transistor General Purpose Bipolar Junction Transistor NPN 50 Volts 0.15 Amps 3-Pin Ultra Miniature Transistor/Reel |
Onsemi |
9,792 |
|
|
2SC4081U3HZGT106Q
|
Semiconductor Component |
ROHM Semiconductor |
7,043 |
|
|
BC860CW
|
Compact power amplifier for audio applications |
INFINEON/PHILIPS |
5,238 |
|
|
BAR64-04W
|
Pin Diode with 200V V(BR) and Silicon Material in SOT-323 Package |
infineon |
9,196 |
|
|
BCR133W
|
BCR133W - NPN Bipolar Junction Transistor for Automotive Applications, 50V, 100mA, SOT-323 Package |
infineon |
9,171 |
|
|
BCR116W
|
NPN Silicon Transistor with SOT-323 Package |
infineon |
6,978 |
|
|
BCR141W
|
BCR141W - Bipolar Transistors with Pre-Biasing |
Infineon Technologies |
7,073 |
|
|
BCR135W
|
-pin configuration |
infineon |
7,615 |
|
|
BCR148W
|
BCR148W is a type of pre-biased bipolar transistor |
infineon |
6,808 |
|
|
BCR108W
|
Pre-Biased Bipolar Transistors |
infineon |
8,744 |
|
|
BCR183W
|
small signal PNP silicon transistor |
infineon |
5,137 |
|
|
BAR63-04W
|
Description: PIN diode with a 50V breakdown voltage, made of silicon, packaged in a ROHS-compliant package |
infineon |
9,778 |
|
|
BBY66-05W
|
variable capacitance diodes |
infineon |
7,249 |
|
|
BCR185W
|
High-voltage PNP Silicon Transistor for Automotive Applications |
infineon |
7,372 |
|
|
BCR166W
|
This transistor has a power rating of 250mW and a maximum current rating of 100mA at 50V |
Infineon Technologies |
6,006 |
|
|
BAR64-05W
|
Silicon PIN diode with a 150V breakdown voltage, housed in a ROHS compliant package-3 |
infineon |
5,345 |
|
|
PMF370XN,115
|
Trans MOSFET N-CH 30V 0.87A 3-Pin SC-70 T/R |
Nexperia |
8,582 |
|
|
MMST3906-7-F
|
SMD Transistor with PNP Polarization, Suitable for General Purpose Circuit Design, 40V Voltage Rating, 0.2A Current Rating, 200mW Power Dissipation |
Diodes Incorporated |
7,262 |
|
|
BAT54SW-7-F
|
RL Variant of BAT54SW-7-F Schottky Diode |
Diodes Incorporated |
5,747 |
|
|
NE85630
|
NPN High Frequency RF Bipolar Transistors |
Nec |
6,558 |
|
|
BAS70W-05-7-F
|
70V Schottky diodes and rectifiers with 200mW power |
Diodes Incorporated |
3,814 |
|
|
PMF370XN
|
N-channel TrenchMOS extremely low level FET |
nexperia |
5,742 |
|
|
BAS16W,115
|
Diode Switching 100V 0.175A 3-Pin SC-70 T/R |
Nexperia |
8,262 |
|
|
BAT854W,115
|
SOT323 BAT854W,115 - 40V 0.2A |
Nexperia |
7,724 |
|
|
MMST2222A-7-F
|
SOT323-packaged NPN bipolar transistor rated for a maximum voltage of 40V |
Diodes Incorporated |
8,832 |
|
|
DF3D18FU,LF
|
DF3D18FU,LF - 2.5A surge protection diode with 33V rating |
Toshiba |
5,121 |
|
