2SC4081U3HZGT106Q
Semiconductor Component
数量 | 単価(USD) | 合計金額 |
---|---|---|
5 | $0.057 | $0.28 |
50 | $0.050 | $2.50 |
150 | $0.048 | $7.20 |
500 | $0.045 | $22.50 |
3000 | $0.037 | $111.00 |
6000 | $0.036 | $216.00 |
在庫:7,043
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : 2SC4081U3HZGT106Q
-
パッケージ/ケース : SOT-323-3
-
ブランド : Rohm Semiconductor
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : 2SC4081U3HZGT106Q データシート (PDF)
概要 2SC4081U3HZGT106Q
Bipolar (BJT) Transistor NPN 50 V 150 mA 180MHz 200 mW Surface Mount UMT3
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | ROHM Semiconductor | Product Category | Bipolar Transistors - BJT |
Mounting Style | SMD/SMT | Package / Case | SOT-323-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 50 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 400 mV |
Maximum DC Collector Current | 200 mA | Pd - Power Dissipation | 200 mW |
Gain Bandwidth Product fT | 180 MHz | Minimum Operating Temperature | - |
Maximum Operating Temperature | + 150 C | Brand | ROHM Semiconductor |
Continuous Collector Current | 150 mA | DC Collector/Base Gain hfe Min | 120 |
DC Current Gain hFE Max | 560 | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si | Unit Weight | 0.001123 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![2SD1898T100Q](/files/uploads/product/s/d5cc67485ce44001910302f3cbd4c7af.webp)
2SD1898T100Q
ROHS compliant silicon
![2SCR523EBTL](/files/uploads/product/s/2SCR523EBTL-22110015.webp)
2SCR523EBTL
SOT-416F Transistor
![2SD1782KT146R](/files/uploads/product/s/cfbdf196-9ad5-4d41-723c-08dbc6589f1f.webp)
2SD1782KT146R
500 mA, 80 V, 3-Pin SOT-346
![2SK3065T100](/files/uploads/product/s/f561f42805f349c3ab46ed8afbde5890.webp)
2SK3065T100
60V N-channel MOSFET with a maximum current rating of 2A
![2SD1898T100R](/files/uploads/product/s/b5e9dbcfbd214731851d51ded114ed5f.webp)
2SD1898T100R
Technical Summary: Rohm's 2SD1898T100R is an NPN Bipolar Transistor with specifications including a 1 A current rating and an 80 V voltage limit
![2SC4081T106Q](/files/uploads/product/s/21b6ee0d91d245ef9bef913602b8d2e3.webp)
2SC4081T106Q
Bipolar Transistors - BJT NPN 50V 0.15A SOT-32 3
![2SK3541T2L](/img/package/mt200.jpg)
2SK3541T2L
This item is classified as an electronic device
![2SK3018T106](/img/package/sot233.jpg)
2SK3018T106
Explore the functionality of the ROHM Semiconductor 2SK3018T106
![2SD2656T106](/img/package/mt200.jpg)
2SD2656T106
SOT-323 packaged NPN transistor with low VCE (sat), 30V 1A
![2SD1980TL](/img/product.png)
2SD1980TL
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SC-63, 3 PIN
![2SK2159-T1-AZ](/img/package/sot89.jpg)
2SK2159-T1-AZ
<p>Support is limited to customers who have already adopted these products.</p>
![IRG4BC20K](/img/package/to220.jpg)
IRG4BC20K
IRG4BC20K Insulated Gate Bipolar Transistor 16A TO220
![MRF316](/img/product.png)
MRF316
Reliable, rugged design for wireless and communication systems
![2SD2150T100R](/img/package/sot89.jpg)
2SD2150T100R
NPN-type bipolar transistors capable of handling up to 20V and 3A
![MJD44H11-1G](/img/package/dpak.jpg)
MJD44H11-1G
NPN Bipolar Transistor with 80V Voltage Rating
![APT5010JLL](/img/package/sot.jpg)
APT5010JLL
APT5010JLL MOSFET in N Channel SOT-227B-4 package, rated for 500V and 41A
![DMG1024UV](/img/package/sot563.jpg)
DMG1024UV
DMG1024UV Mosfet
![BSC109N10NS3GATMA1](/img/package/son8.jpg)
BSC109N10NS3GATMA1
TDSON-8 Package Power Mosfet
![IRF7316PBF](/img/package/soic8.jpg)
IRF7316PBF
High voltage P-Channel MOSFET with dual design and 20V max VGS
![BLF647P,112](/img/package/sot5.jpg)
BLF647P,112
RF Mosfet LDMOS (Dual)