LT1084CP#PBF
|
Suitable for a wide range of applications |
Analog Devices |
6,753 |
|
LT1083CP#PBF
|
High current capability for reliable performance |
Analog Devices |
4,233 |
|
DPG120C300QB
|
Diodes - General Purpose, Power, Switching 120 Amps 300V |
Ixys Integrated Circuits Division |
7,053 |
|
DSA120C150QB
|
Rectifier Diode Schottky 150V 60A 3-Pin(3+Tab) TO-3P |
Ixys Integrated Circuits Division |
9,336 |
|
IXTQ10P50P
|
TO-3P Package Type MOSFET with 3 Pins and Tab |
Ixys Integrated Circuits Division |
7,291 |
|
IXTQ200N10T
|
TO3P-packaged N-MOSFET transistor with a unipolar design |
Ixys Integrated Circuits Division |
7,597 |
|
IXTQ69N30P
|
Low on-resistance of 0.049 Rds |
Ixys Integrated Circuits Division |
4,815 |
|
IXTQ36N30P
|
Compliance: ROHS |
Ixys Integrated Circuits Division |
9,210 |
|
IXTQ82N25P
|
Trans MOSFET N-CH 250V 82A 3-Pin(3+Tab) TO-3P |
Ixys Integrated Circuits Division |
6,073 |
|
IXTQ88N30P
|
PolarFET, N Channel, 88 A |
Ixys Integrated Circuits Division |
8,412 |
|
2SK1518-E
|
N-Channel 500 V 20A Power MOSFET |
Renesas Electronics America Inc |
6,532 |
|
2STA1962
|
TO-3P Power Transistor, PNP Silicon, 15 Amperes, 230 Volts, RoHS Compliant |
Stmicroelectronics |
9,647 |
|
IXTQ76N25T
|
The IXTQ76N25T is a MOSFET capable of handling 76 Amps and 250 Volts, with an on-resistance of 39 milliohms |
Ixys Integrated Circuits Division |
9,028 |
|
IXTQ22N60P
|
Transistor MOSFET N-channel with 600V voltage rating and 22A current capacity in TO-3P package |
Ixys Integrated Circuits Division |
9,654 |
|
IXTQ40N50L2
|
Mosfet Discrete 40A 500V N-Channel Through Hole TO-3P LinearL2 |
Ixys Integrated Circuits Division |
7,080 |
|
IXTQ22N50P
|
Specifications: 22.0 Amps current, 500 V voltage, 0.27 Ohm Rds resistance |
Ixys Integrated Circuits Division |
8,628 |
|
BTW69-1200RG
|
SCR 1200V 50A(RMS) 610A 3-Pin(3+Tab) TOP Insulated Tube |
Stmicroelectronics |
9,726 |
|
FDA16N50
|
Item: NCH MOSFET capable of handling 16.5A at 500V |
Onsemi |
5,192 |
|
FQA10N80C
|
Advanced QFET technology integrated into an 800V N-channel MOSFET |
Onsemi |
8,349 |
|
FQA48N20
|
Power transistor with N-Channel MOSFET technology, capable of handling 200V and 48A |
Onsemi |
5,830 |
|
2SA1386A
|
TRANSISTOR PNP 180V 15A TO-3P |
Sanken Electric Co., Ltd |
5,399 |
|
2SC5287
|
Power Bipolar Transistor 2SC5287 |
Sanken Electric Co., Ltd |
7,382 |
|
2SC5071
|
00V 100W NPN Bipolar Transistors |
Allegro Microsystems |
8,339 |
|
2SC3835
|
High power NPN bipolar transistor in TO3P package |
Sanken Electric Co., Ltd |
6,841 |
|
2SC4138
|
Three-Pin configuration for easy installation |
Sanken Electric Co., Ltd |
7,786 |
|
2SC4706
|
Bipolar Transistors |
Sanken Electric Co., Ltd |
8,349 |
|
NTE2920
|
Product NTE2920 is a ROHS-compliant TO-3P MOSFET with a null voltage of 4V at 250uA, suitable for high-power applications |
Nte Electronics |
9,445 |
|
2SD1193
|
ROHS Bipolar Transistors - BJT |
Onsemi |
9,168 |
|
2SC5200-O
|
Bipolar Transistors NPN 15A |
Toshiba Semiconductor And Storage |
4,345 |
|
2SA1943-O
|
PNP bipolar junction transistor capable of withstanding 230V and 15A |
Toshiba Semiconductor And Storage |
8,498 |
|
NTE2317
|
High power handling of 105000mW |
Nte Electronics |
9,064 |
|
2SC3519A
|
TO-3P Plastic/Epoxy Case |
Sanken Electric Co., Ltd |
5,919 |
|
FQA10N80
|
Detailed overview of FQA10N80 - a high-voltage N-Channel MOSFET |
Onsemi |
8,516 |
|
IXTQ140N10P
|
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P |
Ixys Integrated Circuits Division |
2,864 |
|
2SK2221-E
|
TO-3P Package with 3 Pins and Tab |
Renesas Electronics America Inc |
7,561 |
|
2SK1340-E
|
<p>The 2SK1340 is a Nch Single Power Mosfet 900V 5A 4000Mohm To-3P.</p> |
Renesas Electronics America Inc |
4,070 |
|
IXTQ60N20L2
|
TO-3P packaged N-channel MOSFET designed for efficient power switching applications |
Ixys Integrated Circuits Division |
3,839 |
|
IXTQ30N60L2
|
TO-3P MOSFETs for Environmental Regulations |
Ixys Integrated Circuits Division |
3,061 |
|
NJW21193G
|
PNP power transistors |
Onsemi |
5,802 |
|
NJW21194G
|
Packaged in a rail format for easy transportation and handling |
Onsemi |
7,382 |
|
FFA60UP30DNTU
|
Dual diode, ultrafast, 60A, 300V |
Onsemi |
3,043 |
|
FFA60UP20DNTU
|
Ultrafast diode with dual functionality, designed for 60A and 200V |
Onsemi |
4,388 |
|
FQA28N15_F109
|
TO-3PN Through Hole package type with a power dissipation of 227W |
Onsemi |
2,370 |
|
TIP36CP
|
This transistor has a frequency response of 3MHz and a power dissipation of 125 W |
Stmicroelectronics |
4,119 |
|
2SK2917(F)
|
2SK2917(F) Transistor |
Toshiba Semiconductor And Storage |
3,365 |
|
2SA1943-O(Q)
|
The TO-3PL package type consists of 3 pins and a tab for efficient mounting on circuit boards |
Toshiba Semiconductor And Storage |
6,514 |
|
2STC2510
|
100V NPN Bipolar Transistor: TO-3P package, capable of handling currents up to 25A and frequencies up to 20MHz, with a power rating of 125W |
Stmicroelectronics |
4,052 |
|
2SK2847(F)
|
Trans MOSFET N-CH Si 900V 8A 3-Pin(3+Tab) TO-3P(N)IS |
Toshiba Semiconductor And Storage |
6,664 |
|