2N4921G
With a TO-225 package, the 2N4921G is an NPN transistor capable of handling up to 40V
在庫：7,389
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : 2N4921G
-
パッケージ/ケース : TO225-3
-
ブランド : Onsemi
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : 2N4921G データシート (PDF)
概要 2N4921G
The Power 3 A, 80 V Bipolar NPN Transistor is designed for driver circuits, switching and amplifier applications.
主な特長
- High Current Handling - IC = 5.0 Amp
- Low Noise Figure - NF = 3.5 dB @ f = 10 kHz
- Pb-Free and RoHS Compliant Packaging
- Safe Operating Temperature Range: -40°C to +150°C
- Complementary Pair with PNP N49XX Series
- High-Speed Switching Performance - ton = 20 ns @ IC = 1.0 Amp
応用
These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Last Shipments | Compliance | PbAHP |
| Package Type | TO-225-3 | Case Outline | 77-09 |
| MSL Type | NA | MSL Temp (°C) | 0 |
| Container Type | BLKBX | Container Qty. | 500 |
| ON Target | N | Polarity | NPN |
| Type | General Purpose | VCE(sat) Max (V) | 0.6 |
| IC Cont. (A) | 1 | VCEO Min (V) | 40 |
| VCBO (V) | 40 | VEBO (V) | 5 |
| VBE(sat) (V) | 1.3 | VBE(on) (V) | 1.3 |
| hFE Min | 30 | hFE Max | 150 |
| fT Min (MHz) | 3 | PTM Max (W) | 30 |
| Pricing ($/Unit) | Price N/A |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
2N5886
Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
HGTG12N60A4D
Low power dissipation
2N7002W
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-323 T/R
JANTX2N2907A
JANTX2N2907A is a type of Bipolar Junction Transistor (BJT) specifically designed for small-signal applications
JANTX2N6284
NPN Darlington transistor
BSC022N04LS6ATMA1
High power switching component
BSC052N08NS5ATMA1
80V 95A N-channel Trans MOSFET for Automotive Applications, 8-Pin TDSON EP Package
BSC072N08NS5ATMA1
N-type MOSFET designed for power applications, rated at 80V with a maximum current of 74A, presented in TDSON-8 package
FDPF12N60NZ
20FP Transistor 240W
IPB042N10N3GATMA1
MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3
TGF3020-SM
These RF MOSFET Transistors, operating in the 4-6 GHz range, provide a power output of 5W at 32 volts and exhibit a power gain of 38
STX112-AP
a 100v to-92 rohs to-92-ap ap
MUBW30-12E6K
With its N-channel design and screw mount installation
STD2NB80T4
N-Channel MOSFET with voltage rating of 800 volts and current rating of 1.9 amps
DMP2035UQ-7
The DMP2035UQ-7 MOSFET offers a breakdown voltage (BVDSS) spanning from 8V to 24V
DMP4013LFGQ-13
P-Channel 40V MOSFET with 10.3A Capacity, Packaged in 8-Pin PowerDI3333 Format, Available in Tape and Reel Configuration
HFA3096BZ
High Frequency Transistor Arrays
MJE18204
Bipolar NPN Transistor with a maximum voltage rating of 600V
MUN2111T1G
MUN2111T1G is a digital transistor, specifically a PNP type, designed for pre-biased applications
IXTT1N250HV
5KV 1.5A N-channel MOSFET