2N6520
Bipolar Transistors - BJT
在庫:5,463
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : 2N6520
-
パッケージ/ケース : TO-92-3
-
Brand : Diodes Incorporated
-
Components Classification : Single Bipolar Transistors
-
日付シート : 2N6520 データシート (PDF)
-
Series : 2N6520
概要 2N6520
The 2N6520 High Voltage PNP Bipolar Transistor is a versatile component that is suitable for a wide range of general purpose switching applications. Its high voltage capability and PNP bipolar design make it an ideal choice for use in various electronic circuits and projects. With its TO-92 package, this transistor is well-suited for medium power applications, providing reliable performance and durability
主な特長
- Voltage and Current are Negative for PNP Transistors
- Pb-Free Package is Available*
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Diodes Incorporated | Product Category | Bipolar Transistors - BJT |
RoHS | N | Mounting Style | Through Hole |
Package / Case | TO-92-3 | Transistor Polarity | PNP |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 350 V |
Collector- Base Voltage VCBO | 350 V | Emitter- Base Voltage VEBO | 5 V |
Maximum DC Collector Current | 500 mA | Pd - Power Dissipation | 680 mW |
Gain Bandwidth Product fT | 40 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | 2N6520 |
Brand | Diodes Incorporated | DC Current Gain hFE Max | 20 at 1 mA, 10 V |
Height | 4.01 mm | Length | 4.77 mm |
Product Type | BJTs - Bipolar Transistors | Subcategory | Transistors |
Technology | Si | Width | 2.41 mm |
Unit Weight | 0.016000 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
2N5886
Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
HGTG12N60A4D
Low power dissipation
2N7002W
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-323 T/R
JANTX2N2907A
JANTX2N2907A is a type of Bipolar Junction Transistor (BJT) specifically designed for small-signal applications
JANTX2N6284
NPN Darlington transistor
BSC022N04LS6ATMA1
High power switching component
BSC052N08NS5ATMA1
80V 95A N-channel Trans MOSFET for Automotive Applications, 8-Pin TDSON EP Package
BSC072N08NS5ATMA1
N-type MOSFET designed for power applications, rated at 80V with a maximum current of 74A, presented in TDSON-8 package
FDPF12N60NZ
20FP Transistor 240W
IPB042N10N3GATMA1
MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3
IXYH82N120C3
IGBT with N-type channel, 1200V voltage rating, 200A current capacity, TO247AD package, XPT GenX3 technology
IXKH70N60C5
Channel MOSFET with Enhancement Mode
IRF9Z34NSPBF
HEXFET P-channel MOSFET rated for -55V with 100mOhm on-resistance and 23.3nC gate charge
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
MJ15020
TO-204 (TO-3) MJ15020 Transistor
CPC5602C
350V N-channel MOSFET
IRLD120PBF
Vishay IRLD120PBF N-channel MOSFET Transistor, 1.3 A, 100 V, 4-Pin HVMDIP
SI1026X-T1-GE3
Vishay SI1026X-T1-GE3 Dual N-channel MOSFET
2N7002P,235
N-channel MOSFET with a voltage rating of 60V and a current rating of 0.36A, packaged in SOT-23
STE180N10
N-Channel Power MOSFET with a Voltage Rating of 100V and a Current Rating of 180A in a 4-Pin ISOTOP Package