IXKH70N60C5
Channel MOSFET with Enhancement Mode
在庫:6,099
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXKH70N60C5
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXKH70N60C5 データシート (PDF)
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Series : IXKH70N60
概要 IXKH70N60C5
Elevate your electronic designs with the IXKH70N60C5 Power MOSFET, a revolutionary product that sets new standards in the industry. Utilizing Super Junction technology, this MOSFET boasts the lowest RDS(on) in the 600V-800V class, ensuring optimal power efficiency and performance. Its innovative design with internal DCB isolation simplifies installation and reduces thermal resistance, allowing for seamless heat dissipation and improved reliability. Additionally, the device is Avalanche rated, making it suitable for even the most demanding applications where ruggedness and durability are essential
主な特長
- Silicon-Gate MOSFET
- Linear Mode Operation
- Low Input Current
- Wide Operating Temperature
応用
- Compact size
- Efficient performance
- Reliable operation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Drain-Source Voltage (V) | 600 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.045 |
Continuous Drain Current @ 25 ℃ (A) | 70 | Gate Charge (nC) | 150 |
Input Capacitance, CISS (pF) | 6800 | Thermal resistance [junction-case] (K/W) | 0.2 |
Configuration | Single | Package Type | TO-247AD |
Typical Reverse Recovery Time (ns) | 600 | Power Dissipation (W) | 625 |
Sample Request | No | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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