2SB1260T100R
Silicon PNP Small Signal Bipolar Transistor 1A I(C) 80V V(BR)CEO 1-Element
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.145 | $0.72 |
| 50 | $0.127 | $6.35 |
| 150 | $0.120 | $18.00 |
| 1000 | $0.111 | $111.00 |
| 2000 | $0.107 | $214.00 |
| 5000 | $0.104 | $520.00 |
在庫：9,119
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : 2SB1260T100R
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パッケージ/ケース : SOT89
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Brand : Rohm Semiconductor
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Components Classification : Single Bipolar Transistors
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日付シート : 2SB1260T100R データシート (PDF)
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Series : 2SB1260
概要 2SB1260T100R
Bipolar (BJT) Transistor PNP 80 V 1 A 100MHz 2 W Surface Mount MPT3
主な特長
- 1) Hight breakdown voltage and high current.
- BVCEO= −80V, IC = −1A
- 2) Good hFE linearty.
- 3) Low VCE(sat).
- 4) Complements the 2SD1898 / 2SD1733.
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Bipolar Transistors - BJT | RoHS | Details |
| Mounting Style | SMD/SMT | Transistor Polarity | PNP |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 80 V |
| Collector- Base Voltage VCBO | 80 V | Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 400 mV | Maximum DC Collector Current | 1 A |
| Pd - Power Dissipation | 2 W | Gain Bandwidth Product fT | 100 MHz |
| Maximum Operating Temperature | + 150 C | Series | 2SB1260 |
| Brand | ROHM Semiconductor | Continuous Collector Current | - 1 A |
| DC Collector/Base Gain hfe Min | 82 | DC Current Gain hFE Max | 390 |
| Height | 1.5 mm | Length | 4.5 mm |
| Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 1000 |
| Subcategory | Transistors | Technology | Si |
| Width | 2.5 mm | Unit Weight | 0.004603 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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