2SC2712-Y
Trans GP BJT NPN 50V 0.15A 150mW Automotive 3-Pin S-Mini
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 50 | $0.012 | $0.60 |
| 500 | $0.010 | $5.00 |
| 3000 | $0.009 | $27.00 |
| 6000 | $0.008 | $48.00 |
| 24000 | $0.008 | $192.00 |
| 51000 | $0.008 | $408.00 |
在庫：5,925
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : 2SC2712-Y
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パッケージ/ケース : SOT23-3
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Brand : TOSHIBA
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Components Classification : Single Bipolar Transistors
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日付シート : 2SC2712-Y データシート (PDF)
概要 2SC2712-Y
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTORFEATURES* High Voltage and High Current: VCEO=50V, IC=150mA (Max.)* Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)* High hFE* Low Noise
主な特長
- High Voltage and High Current: VCEO=50V, IC=150mA (Max.)
- Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
- High hFE
- Low Noise
応用
AMPLIFIER
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Bipolar Transistors - BJT | RoHS | Details |
| Mounting Style | SMD/SMT | Transistor Polarity | NPN |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 50 V |
| Collector- Base Voltage VCBO | 60 V | Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 250 mV | Maximum DC Collector Current | 150 mA |
| Pd - Power Dissipation | 150 mW | Gain Bandwidth Product fT | 80 MHz |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 125 C |
| Series | 2SC2712 | Brand | Toshiba |
| Continuous Collector Current | 150 mA | DC Collector/Base Gain hfe Min | 70 |
| DC Current Gain hFE Max | 700 | Height | 1.1 mm |
| Length | 2.9 mm | Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 10000 | Subcategory | Transistors |
| Technology | Si | Width | 1.5 mm |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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