2SD2150T100R
NPN-type bipolar transistors capable of handling up to 20V and 3A
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.142 | $0.71 |
| 50 | $0.123 | $6.15 |
| 150 | $0.114 | $17.10 |
| 1000 | $0.104 | $104.00 |
| 2000 | $0.099 | $198.00 |
| 5000 | $0.096 | $480.00 |
在庫：9,509
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : 2SD2150T100R
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パッケージ/ケース : SOT89
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Brand : Rohm Semiconductor
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Components Classification : Single Bipolar Transistors
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日付シート : 2SD2150T100R データシート (PDF)
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Series : 2SD2150
概要 2SD2150T100R
The 2SD2150T100R, part of the renowned 2SD series of transistors, is an NPN bipolar junction transistor designed for general-purpose amplifier and switching applications. Enclosed in the popular TO-220F package, this transistor excels in heat dissipation and robustness. With a maximum collector-base voltage of 100V and a maximum collector current of 5A, it offers reliable performance in various electronic circuits. The 2SD2150T100R also delivers a power dissipation of 2.5W and a transition frequency of 150MHz, making it an ideal choice for a wide range of applications
主な特長
- 1) Low VCE(sat).
- VCE(sat) = 0.2V(Typ.)
- （ IC / IB = 2A / 0.1A）
- 2) Excellent current gain characteristics.
- 3) Complements the 2SB1424.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Bipolar Transistors - BJT | Transistor Polarity | NPN |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 20 V |
| Collector- Base Voltage VCBO | 40 V | Emitter- Base Voltage VEBO | 6 V |
| Maximum DC Collector Current | 3 A | Pd - Power Dissipation | 2 W |
| Gain Bandwidth Product fT | 290 MHz | Maximum Operating Temperature | + 150 C |
| Brand | Infineon Technologies | Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors | Technology | Si |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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