AON7522E
Product AON7522E is a MOSFET featuring a 30-volt capacity with a resistance of 4 milliohms at a 20-amp load
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.364 | $0.36 |
10 | $0.293 | $2.93 |
30 | $0.262 | $7.86 |
100 | $0.223 | $22.30 |
500 | $0.206 | $103.00 |
1000 | $0.197 | $197.00 |
在庫:8,305
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : AON7522E
-
パッケージ/ケース : DFN-3
-
Brand : Alpha & Omega Semiconductor Inc.
-
Components Classification : Single FETs, MOSFETs
-
日付シート : AON7522E データシート (PDF)
概要 AON7522E
N-Channel 30 V 21A (Ta), 34A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-DFN-EP (3x3)
主な特長
- VDS 30V
- ID (at VGS=10V) 34A
- RDS(ON) (at VGS=10V) <4mΩ
- RDS(ON) (at VGS = 4.5V) <6.8mΩ
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
ECCN (US) | EAR99 | Part Status | Active |
HTS | 8541.29.00.95 | Category | Power MOSFET |
Configuration | Single Quad Drain Triple Source | Process Technology | Trench Power AlphaMOS |
Channel Mode | Enhancement | Channel Type | N |
Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 | Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Continuous Drain Current (A) | 34 | Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum IDSS (uA) | 1 | Maximum Drain Source Resistance (mOhm) | 4@10V |
Typical Gate Charge @ Vgs (nC) | [email protected]|33.4@10V | Typical Gate Charge @ 10V (nC) | 33.4 |
Typical Input Capacitance @ Vds (pF) | 1540@15V | Maximum Power Dissipation (mW) | 31000 |
Typical Fall Time (ns) | 10 | Typical Rise Time (ns) | 8.3 |
Typical Turn-Off Delay Time (ns) | 24 | Typical Turn-On Delay Time (ns) | 7 |
Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 150 |
Typical Drain Source Resistance @ 25°C (mOhm) | [email protected]|3.2@10V | Mounting | Surface Mount |
Package Height | 0.78 | Package Width | 3 |
Package Length | 3 | PCB changed | 8 |
Standard Package Name | DFN | Supplier Package | DFN-A EP |
Pin Count | 8 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![AON6508](/files/uploads/product/s/837123c6bd5f47519a0c9bb8942fb753.webp)
AON6508
Surface-mount transistor designed for efficient switching operations
![AOD7S60](/img/package/dpak2.jpg)
AOD7S60
83W power dissipation at 10V and 3.9V threshold voltage at 250uA
![AOD2610E](/img/package/dpak2.jpg)
AOD2610E
60V N-channel MOSFET in TO252 package with 46A current rating
![AONS66811](/img/package/power33.jpg)
AONS66811
N-Channel AlphaSGT2 with 80V rating
![AON7422G](/img/package/dfn.jpg)
AON7422G
N-Channel MOSFET rated for 30V, identified by the code AON7422G
![AON6590](/img/package/dfn.jpg)
AON6590
Silicon Metal-oxide Semiconductor Technology
![AON7450](/img/package/power33.jpg)
AON7450
AON7450 is an N-channel transistor designed for high voltage and high current applications
![AON7932](/img/package/dfn8.jpg)
AON7932
Operating voltage of 30V
![AOK40B65H2AL](/img/package/to247.jpg)
AOK40B65H2AL
AOK40B65H2AL is a N-channel IGBT chip capable of handling up to 650 volts and 80 amps, housed in a TO-247 package
![AOD9N40](/img/package/dpak.jpg)
AOD9N40
TO252 Packaged N-MOSFET Transistor: Unipolar, 400V, 5A, 125W
![SIRA20DP-T1-RE3](/img/package/power33.jpg)
SIRA20DP-T1-RE3
VISHAY - SIRA20DP-T1-RE3 - MOSFET, N-CH, 25V, 100A, POWERPAK SO
![IRLHS6376TRPBF](/files/uploads/product/s/54779a6c444f4e68876383dc534d3782.webp)
IRLHS6376TRPBF
Transistor MOSFET with N-channel, 30V Voltage Rating, 3.6A Current Rating, 6-Pin PQFN EP Package
![BTA30H-800CW3G](/img/package/to220.jpg)
BTA30H-800CW3G
Gate Trigger 1.3V 35mA
![IXTP44N10T](/img/package/to220.jpg)
IXTP44N10T
Product description: 100V 44A N Channel MOSFET, 30mΩ at 22A, 130W at 10V, TO-220-3 package
![DZT5551-13](/img/package/sot223.jpg)
DZT5551-13
BJT devices designed for 1000mW power and 160Vceo voltage
![SI4062DY-T1-GE3](/img/package/soic8.jpg)
SI4062DY-T1-GE3
8-pin surface mount transistor with N-channel design for use in electronic circuits
![AOU3N60](/img/package/to251.jpg)
AOU3N60
MOSFET transistor designed for use in switching applications requiring high voltage and moderate current capabilities
![BC817DS,115](/img/package/tsop6.jpg)
BC817DS,115
Product BC817DS
![NVTFS4C05NTAG](/img/package/dfn8.jpg)
NVTFS4C05NTAG
Product NVTFS4C05NTAG is a N-channel FET with a maximum voltage rating of 30V and a current rating of 75A, featuring a resistance of 3
![RV2C014BCT2CL](/img/package/dfn10.jpg)
RV2C014BCT2CL
MOSFET P-Chnl with -20V Vdss and +/-1.4A Id RASMID