AOTF4N60
AOTF4N60: N-type Metal-oxide Semiconductor Field-Effect Transistor (MOSFET)
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.377 | $0.38 |
| 10 | $0.308 | $3.08 |
| 30 | $0.277 | $8.31 |
| 100 | $0.240 | $24.00 |
| 500 | $0.223 | $111.50 |
| 1000 | $0.214 | $214.00 |
在庫：5,689
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : AOTF4N60
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パッケージ/ケース : TO-220F
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ブランド : Alpha And Omega Semiconductor
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : AOTF4N60 データシート (PDF)
概要 AOTF4N60
N-Channel 600 V 4A (Tc) 35W (Tc) Through Hole TO-220F
主な特長
- With TO-220F packaging
- High speed switching
- Very high commutation ruggedness
- Easy to use
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device
- performance and reliable operation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| ECCN (US) | EAR99 | Part Status | NRND |
| HTS | 8541.29.00.95 | SVHC | Yes |
| SVHC Exceeds Threshold | Yes | Category | Power MOSFET |
| Configuration | Single | Channel Mode | Enhancement |
| Channel Type | N | Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 600 | Maximum Gate Source Voltage (V) | ±30 |
| Maximum Continuous Drain Current (A) | 4 | Maximum Drain Source Resistance (mOhm) | 2200@10V |
| Typical Gate Charge @ Vgs (nC) | 15@10V | Typical Gate Charge @ 10V (nC) | 15 |
| Typical Input Capacitance @ Vds (pF) | 511@25V | Maximum Power Dissipation (mW) | 35000 |
| Typical Fall Time (ns) | 27 | Typical Rise Time (ns) | 28.7 |
| Typical Turn-Off Delay Time (ns) | 36 | Typical Turn-On Delay Time (ns) | 20.2 |
| Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 150 |
| Typical Drain Source Resistance @ 25°C (mOhm) | 1900@10V | Mounting | Through Hole |
| Package Height | 15.87 | Package Width | 4.7 |
| Package Length | 10.16 | PCB changed | 3 |
| Tab | Tab | Standard Package Name | TO |
| Supplier Package | TO-220F | Pin Count | 3 |
| Lead Shape | Through Hole |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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