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APT5012JN

APT5012JN by Microchip Technology - Description

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概要 APT5012JN

The APT5012JN is a high performance N-channel RF power MOSFET designed to excel in high power amplifiers operating within the 500 MHz to 2 GHz frequency range. Its impressive maximum drain-source voltage of 50V and continuous drain current of 23A make it perfect for applications requiring high RF power output. This MOSFET also boasts a low thermal resistance package, allowing for efficient heat dissipation and enabling the device to maintain high power levels without overheating. These features make it an excellent choice for high power RF applications such as broadcast transmitters, radar systems, and communication systems. The compact footprint and high reliability of the APT5012JN make it a breeze to integrate into RF power amplifier designs, while its excellent input and output matching characteristics ensure high efficiency and performance in RF power amplifier circuits

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series POWER MOS IV® Package Tray
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 370 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 25 V Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package ISOTOP® Package / Case SOT-227-4, miniBLOC

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    部品の品質保証: 365 日

    返品・返金：90日以内

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