|
IXTN110N20L2
|
SOT227B-packaged single transistor module engineered for 200V operation and 100A current handling |
IXYS |
9,586 |
|
|
IXFN80N50P
|
MOSFET with a 500V voltage rating and a maximum current capacity of 66A |
Littelfuse |
8,515 |
|
|
IXFN82N60Q3
|
IXFN82N60Q3 is a power MOSFET designed for N-channel operation |
IXYS |
8,548 |
|
|
IXFN210N30X3
|
High Voltage Transistor |
IXYS |
7,619 |
|
|
IXFN300N20X3
|
IXFN300N20X3: N-channel MOSFET rated for 200 volts and 300 amperes, packaged in SOT227B |
IXYS |
9,327 |
|
|
IXFN240N25X3
|
Product IXFN240N25X3 is a N Channel MOSFET with specifications including a maximum voltage rating of 250V |
IXYS |
5,638 |
|
|
MSC040SMA120J
|
The MSC040SMA120J is a tube-packaged N-channel SiC MOSFET capable of handling up to 1.2KV and 53A, housed in a 4-pin SOT-227 configuration." |
Microchip Technology |
7,336 |
|
|
MSC025SMA120J
|
This device is a Power Field-Effect Transistor capable of handling a current up to 77A and operating at a voltage of 1200V |
Microchip Technology |
6,471 |
|
|
IXFN120N65X2
|
Details: The IXFN120N65X2 is a MOSFET device featuring an N-Type channel, capable of handling up to 650 Volts and 108 Amperes |
IXYS |
9,102 |
|
|
IXFN140N30P
|
High power Single N-Channel Mosfet |
IXYS |
7,540 |
|
|
IXFN110N60P3
|
With a voltage rating of 600V and a current capacity of 90A, IXFN110N60P3 is an N-channel MOSFET tailored for power applications up to 1 |
IXYS |
5,778 |
|
|
IXTN170P10P
|
High-power P-channel MOSFET transistor in a 4-pin SOT-227B package rated for 100 volts and 170 amperes |
IXYS |
8,406 |
|
|
IXKN45N80C
|
Power Field-Effect Transistor with 44A I(D) |
IXYS |
7,727 |
|
|
IXFN106N20
|
Discrete Semiconductor Modules IXFN106N20 |
IXYS |
5,908 |
|
|
IXFN32N120
|
Silicon N-channel Transistor MOSFET with 1.2KV voltage rating, 32A current rating, and 4-pin SOT-227B package |
IXYS |
7,010 |
|
|
IXTN200N10L2
|
channel power MOSFET |
IXYS |
7,699 |
|
|
IXTN60N50L2
|
N-Channel 500V 53A Chassis Mount Power Transistor with SOT-227B Package |
IXYS |
5,684 |
|
|
IXKN40N60C
|
Miniature Package with Class 3 Junctions |
Littelfuse |
6,249 |
|
|
IXFN27N80
|
27A current N-Channel transistor for industrial use |
IXYS |
8,671 |
|
|
IXFN48N50
|
Featuring a low on-resistance of just 100mΩ at 10V and 24A |
Littelfuse |
9,960 |
|
|
IXFN210N20P
|
IXFN210N20P, classified as a Power Field-Effect Transistor, boasts a high current rating of 188A and a voltage tolerance of 200V |
Littelfuse |
5,588 |
|
|
IXFN64N50P
|
The IXFN64N50P is a robust Power Field-Effect Transistor designed for high-current applications, supporting up to 61A and 500V |
IXYS |
5,789 |
|
|
IXFN230N20T
|
The IXFN230N20T is a MOSFET available in the SOT-227B package, meeting ROHS standards |
Littelfuse |
8,908 |
|
|
IXFN32N120P
|
IXFN32N120P High-Power N-Channel Transistor with 32A Current Rating |
IXYS |
5,571 |
|
|
IXFN300N10P
|
100V 295A Transistor |
IXYS |
5,191 |
|
|
IXFN180N20
|
IXFN180N20: Power MOSFET with N-type channel, capable of handling 200 volts and 180 amperes, packaged in 4 pins using SOT-227B standard |
Littelfuse |
5,465 |
|
|
IXFN50N80Q2
|
Power Field-Effect Transistor with 50A I(D) and 800V |
Ixys |
8,747 |
|
|
IXFN44N60
|
A high-power N-Channel Silicon MOSFET designated IXFN44N60, capable of handling 44A Drain Current at 600V Voltage, featuring low On-Resistance of 0 |
Littelfuse |
7,661 |
|
|
IXFN55N50
|
N-channel Power MOSFET, 55 Amps, 500 Volts, 4-Pin SOT-227B |
IXYS |
9,456 |
|
|
IXFN44N80
|
44 Amps Discrete Semiconductor Modules with 800V and 0.145 Rds |
IXYS |
6,240 |
|
|
IXFN34N80
|
ROHS Compliant IXFN34N80 MOSFETs |
IXYS |
5,541 |
|
|
IXFN44N50
|
IXFN44N50 is a discrete semiconductor module capable of handling 500 volts and a current of 44 amperes |
Littelfuse |
7,166 |
|
|
IXFN360N10T
|
MOSFET IXFN360N10T: N-channel device designed for high-power applications, supporting up to 100 volts and 360 amps |
Littelfuse |
8,361 |
|
|
IXFN26N90
|
MOSFETs ROHS IXFN26N90 SOT-227B |
Littelfuse |
8,647 |
|
|
IXFN48N60P
|
Explore the IXFN48N60P: a robust N-channel MOSFET tailored for high-voltage scenarios |
IXYS |
8,060 |
|
|
IXFN38N100P
|
1kV N-channel MOSFET with 38A current rating and 210mΩ resistance at 10V |
IXYS |
8,780 |
|
|
IXFN62N80Q3
|
SOT227B N-Channel 800 V 140 mOhm 270 nC HyperFET Power MosFet IXFN62N80Q3 |
IXYS |
9,868 |
|
|
IXFN170N10
|
IXFN170N10 SOT-227B MOSFETs ROHS |
IXYS |
9,947 |
|
|
IXFN44N80P
|
PLASTIC MINIBLOC-4 with 0.19ohm |
IXYS |
7,587 |
|
|
IXFN44N100Q3
|
8A 1kV single transistor module SOT227B screw Idm 110A 960W |
IXYS |
8,128 |
|
|
IXFN36N60
|
This discrete semiconductor module, designated as IXFN36N60, is designed for applications requiring 600V and 36A |
IXYS |
9,554 |
|
|
IXFN60N60
|
Semiconductor Modules 600V 60A Discrete |
Littelfuse |
8,114 |
|
|
APT2X101DQ100J
|
Rectifier Diode with 1000V Ultrafast Soft Recovery Technology |
Microchip |
6,636 |
|
|
APT50M50JVFR
|
Four-pin SOT-227 package |
Microchip |
8,018 |
|
|
APT8015JVR
|
Product APT8015JVR is an N-channel MOSFET featuring a maximum voltage of 800 volts and a maximum current of 44 amps |
Microchip Technology |
7,750 |
|
|
APT2X61D120J
|
Rectifier Diode Switching 1.2KV 53A 400ns 4-Pin SOT-227 Tube |
Microchip Technology |
8,721 |
|
|
APT2X61D100J
|
Module for Rectifying - High-Speed Recovery/FRED |
Microchip |
8,119 |
|
|
APT2X101DQ60J
|
High-Voltage Diode Switching Module with 100A Current Handling Capability |
Microchip Technology |
7,212 |
|
|
APT2X101D100J
|
Rectifier diode with fast recovery time ideal for power electronics |
Microchip |
6,641 |
|
|
APT2X101D40J
|
Rectifier Diode Switching 400V 100A 50ns 4-Pin SOT-227 Tube |
Microchip Technology |
5,119 |
|
